IRHNJ57Z30 RADIATION HARDENED JANSR2N7479U3 …

1 PD - 93751D. IRHNJ57Z30 . RADIATION HARDENED JANSR2N7479U3 . POWER MOSFET 30V, N-CHANNEL. SURFACE MOUNT ( ) REF: MIL-PRF-19500/703. 5 . TECHNOLOGY. Product Summary Part Number RADIATION Level RDS(on) ID QPL Part Number IRHNJ57Z30 100K Rads (Si) 22A* JANSR2N7479U3 . IRHNJ53Z30 300K Rads (Si) 22A* JANSF2N7479U3. IRHNJ54Z30 500K Rads (Si) 22A* JANSG2N7479U3. IRHNJ58Z30 1000K Rads (Si) 22A* JANSH2N7479U3. TM. International Rectifier's R5 technology provides high performance power MOSFETs for space applications. These devices have been characterized Features: for Single Event Effects (SEE) with useful performance n Single Event Effect (SEE) HARDENED up to an LET of 80 (MeV/(mg/cm2)). The combination n Ultra Low RDS(on). of low RDS(on) and low gate charge reduces the power n Low Total Gate Charge losses in switching applications such as DC to DC n Simple Drive Requirements converters and motor control.

2 These devices retain n Ease of Paralleling all of the well established advantages of MOSFETs n Hermetically Sealed such as voltage control, fast switching, ease of n Surface Mount paralleling and temperature stability of electrical n Ceramic Package parameters. n Light Weight Absolute Maximum Ratings Pre-Irradiation Parameter Units ID @ VGS = 12V, TC = 25 C Continuous Drain Current 22*. ID @ VGS = 12V, TC = 100 C Continuous Drain Current 22* A. IDM Pulsed Drain Current 88. PD @ TC = 25 C Max. Power Dissipation 75 W. Linear Derating Factor W/ C. VGS Gate-to-Source Voltage 20 V. EAS Single Pulse Avalanche Energy 155 mJ. IAR Avalanche Current 22 A. EAR Repetitive Avalanche Energy mJ. dv/dt Peak Diode Recovery dv/dt V/ns TJ Operating Junction -55 to 150.

3 O T STG Storage Temperature Range C. Pckg. Mounting Surface Temp. 300 (for 5s). Weight (Typical) g * Current is limited by package For footnotes refer to the last page 1. 04/25/06. IRHNJ57Z30 , JANSR2N7479U3 Pre-Irradiation Electrical Characteristics @ Tj = 25 C (Unless Otherwise Specified). Parameter Min Typ Max Units Test Conditions BVDSS Drain-to-Source Breakdown Voltage 30 V VGS = 0V, I D = BVDSS/ TJ Temperature Coefficient of Breakdown V/ C Reference to 25 C, ID = Voltage RDS(on) Static Drain-to-Source On-State VGS = 12V, ID = 22A.. Resistance VGS(th) Gate Threshold Voltage V VDS = VGS, ID = VDS 15V, IDS = 22A .. g fs Forward Transconductance 16 S( ). IDSS Zero Gate Voltage Drain Current 10 VDS= 24V ,VGS=0V. A. 25 VDS = 24V, VGS = 0V, TJ = 125 C.

4 IGSS Gate-to-Source Leakage Forward 100 VGS = 20V. nA. IGSS Gate-to-Source Leakage Reverse -100 VGS = -20V. Qg Total Gate Charge 65 VGS =12V, I D = 22A. Q gs Gate-to-Source Charge 20 nC VDS = 15V. Q gd Gate-to-Drain ( Miller') Charge 10. td(on) Turn-On Delay Time 25 VDD = 15V, ID = 22A, tr Rise Time 100 VGS =12V, RG = . ns td(off) Turn-Off Delay Time 35. tf Fall Time 30. LS + LD Total Inductance nH Measured from the center of drain pad to center of source pad Ciss Input Capacitance 2054 VGS = 0V, VDS = 25V. C oss Output Capacitance 936 pF f = C rss Reverse Transfer Capacitance 33 . Source-Drain Diode Ratings and Characteristics Parameter Min Typ Max Units Test Conditions IS Continuous Source Current (Body Diode) 22*. A. ISM Pulse Source Current (Body Diode) 88.

5 VSD Diode Forward Voltage V Tj = 25 C, IS = 22A, VGS = 0V . trr Reverse Recovery Time 102 ns Tj = 25 C, IF = 22A, di/dt 100A/ s Q RR Reverse Recovery Charge 193 nC VDD 25V . ton Forward Turn-On Time Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD. * Current is limited by package Thermal Resistance Parameter Min Typ Max Units Test Conditions RthJC Junction-to-Case C/W. RthJ-PCB Junction-to-PC board soldered to a 2 square copper-clad board Note: Corresponding Spice and Saber models are available on International Rectifier web site. For footnotes refer to the last page 2 RADIATION Characteristics Pre-Irradiation IRHNJ57Z30 , JANSR2N7479U3 . International Rectifier RADIATION HARDENED MOSFETs are tested to verify their RADIATION hardness capability.

6 The hardness assurance program at International Rectifier is comprised of two RADIATION environments. Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison. Table 1. Electrical Characteristics @ Tj = 25 C, Post Total Dose Irradiation . Parameter Up to 500K Rads(Si)1 1000K Rads (Si)2 Units Test Conditions Min Max Min Max BVDSS Drain-to-Source Breakdown Voltage 30 30 V VGS = 0V, I D = VGS(th) Gate Threshold Voltage VGS = VDS , ID = IGSS Gate-to-Source Leakage Forward 100 100 nA VGS = 20V. IGSS Gate-to-Source Leakage Reverse -100 -100 VGS = -20 V.

7 IDSS Zero Gate Voltage Drain Current 10 25 A VDS= 24V, VGS =0V. RDS(on) Static Drain-to-Source VGS = 12V, ID =22A. On-State Resistance (TO-3). RDS(on) Static Drain-to-Source VGS = 12V, ID =22A. On-State Resistance ( ). VSD Diode Forward Voltage V VGS = 0V, IS = 22A. 1. Part numbers IRHNJ57Z30 ( JANSR2N7479U3 ), IRHNJ53Z30 (JANSF2N7479U3) and IRHNJ54Z30 (JANSG2N7479U3). 2. Part number IRHNJ58Z30 (JANSH2N7479U3). International Rectifier RADIATION HARDENED MOSFETs have been characterized in heavy ion environment for Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2. Table 2. Single Event Effect Safe Operating Area Ion LET Energy Range VDS (V). (MeV/(mg/cm2)) (MeV) ( m) @V GS=0V @VGS=-5V @V GS=-10V @VGS=-15V Cu 28 261 40 30 30 30 25 15.

8 Br 37 285 37 30 30 30 15. I 60 344 33 25 25 20 15 35. 30. 25 Cu VDS. 20. Br 15. 10 I. 5. 0. 0 -5 -10 -15 -20. VGS. Fig a. Single Event Effect, Safe Operating Area For footnotes refer to the last page 3. IRHNJ57Z30 , JANSR2N7479U3 Pre-Irradiation 100 100. VGS VGS. TOP 15V TOP 15V. 12V 12V. I D , Drain-to-Source Current (A). 10V. I D , Drain-to-Source Current (A). 10V. BOTTOM BOTTOM 10 10. 20 s PULSE WIDTH 20 s PULSE WIDTH. TJ = 25 C TJ = 150 C. 1 1. 1 10 100 1 10 100. VDS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V). Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 100 TJ = 25 C ID = 22A. RDS(on) , Drain-to-Source On Resistance I D , Drain-to-Source Current (A). TJ = 150 C. (Normalized). 10 25V.

9 V DS =15. 15V. 20 s PULSE WIDTH VGS = 12V. 1 -60 -40 -20 0 20 40 60 80 100 120 140 160. VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature ( C). Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature 4 Pre-Irradiation IRHNJ57Z30 , JANSR2N7479U3 . 4000 20. VGS = 0V, f = 1 MHz ID = 22A. Ciss = Cgs + Cgd , Cds SHORTED VDS = 24V. Crss = Cgd VGS , Gate-to-Source Voltage (V). VDS = 15V. 3200 Coss = Cds + Cgd VDS = 6V. 15. C, Capacitance (pF). Coss 2400. Ciss 10. 1600. 5. 800. Crss FOR TEST CIRCUIT. SEE FIGURE 13. 0 0. 1 10 100 0 10 20 30 40 50 60. VDS , Drain-to-Source Voltage (V) QG , Total Gate Charge (nC). Fig 5. Typical Capacitance Vs. Fig 6. Typical Gate Charge Vs. Drain-to-Source Voltage Gate-to-Source Voltage 100 1000.

10 ISD , Reverse Drain Current (A). OPERATION IN THIS AREA. ID, Drain-to-Source Current (A). LIMITED BY R DS(on). TJ = 150 C. 100. TJ = 25 C. 10 100 s 10 1ms Tc = 25 C 10ms Tj = 150 C. Single Pulse V GS = 0 V. 1 1. 1 10 100. VSD ,Source-to-Drain Voltage (V). VDS, Drain-to-Source Voltage (V). Fig 7. Typical Source-Drain Diode Fig 8. Maximum Safe Operating Area Forward Voltage 5. IRHNJ57Z30 , JANSR2N7479U3 Pre-Irradiation 50 RD. VDS. LIMITED BY PACKAGE. VGS. 40 RG. I D , Drain Current (A). +. -V DD. 30 V GS. Pulse Width 1 s Duty Factor %. 20. Fig 10a. Switching Time Test Circuit 10 VDS. 90%. 0. 25 50 75 100 125 150. TC , Case Temperature ( C). 10%. VGS. Fig 9. Maximum Drain Current Vs. td(on) tr t d(off) tf Case Temperature Fig 10b. Switching Time Waveforms 10.