30V P-Channel MOSFET

1 AO4801A. 30V P-Channel MOSFET . General Description Product Summary The AO4801A combines advanced trench MOSFET VDS -30V. technology with a low resistance package to provide ID (at VGS=-10V) -5A. extremely low RDS(ON).This device is suitable for use as a RDS(ON) (at VGS=-10V) < 48m . load switch or in PWM applications. RDS(ON) (at VGS = ) < 57m . RDS(ON) (at VGS = ) < 80m . 100% UIS Tested 100% Rg Tested SOIC-8. D1 D2. Top View Bottom View SOIC-8. Top View S2 1 8 D2. G2 2 7 D2. S1 3 6 D1. G1 G2. G1 4 5 D1. S1 S2. Pin1. Absolute Maximum Ratings TA=25 C unless otherwise noted Parameter Symbol Maximum Units Drain-Source Voltage VDS -30 V. Gate-Source Voltage VGS 12 V. Continuous Drain TA=25 C -5. ID. Current TA=70 C -4 A. Pulsed Drain Current C IDM -28. Avalanche Current C IAS, IAR 17 A. Avalanche energy L= C EAS, EAR 14 mJ. TA=25 C 2. PD W. Power Dissipation B TA=70 C Junction and Storage Temperature Range TJ, TSTG -55 to 150 C. Thermal Characteristics Parameter Symbol Typ Max Units Maximum Junction-to-Ambient A t 10s 48 C/W.

2 R JA. Maximum Junction-to-Ambient A D Steady-State 74 90 C/W. Maximum Junction-to-Lead Steady-State R JL 32 40 C/W. Rev 3: Mar. 2011 Page 1 of 5. AO4801A. Electrical Characteristics (TJ=25 C unless otherwise noted). Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS. BVDSS Drain-Source Breakdown Voltage ID=-250 A, VGS=0V -30 V. VDS=-30V, VGS=0V -1. IDSS Zero Gate Voltage Drain Current A. TJ=55 C -5. IGSS Gate-Body leakage current VDS=0V, VGS= 12V 100 nA. VGS(th) Gate Threshold Voltage VDS=VGS ID=-250 A V. ID(ON) On state drain current VGS= , VDS=-5V -28 A. VGS=-10V, ID=-5A 40 48. m . TJ=125 C 60 72. RDS(ON) Static Drain-Source On-Resistance VGS= , ID= 45 57 m . VGS= , ID= 60 80 m . gFS Forward Transconductance VDS=-5V, ID=-5A 18 S. VSD Diode Forward Voltage IS=-1A,VGS=0V -1 V. IS Maximum Body-Diode Continuous Current A. DYNAMIC PARAMETERS. Ciss Input Capacitance 515 645 780 pF. Coss Output Capacitance VGS=0V, VDS=-15V, f=1 MHz 55 80 105 pF. Crss Reverse Transfer Capacitance 30 55 80 pF.

3 Rg Gate resistance VGS=0V, VDS=0V, f=1 MHz 4 12 . SWITCHING PARAMETERS. Qg( ) Total Gate Charge 5 7 9 nC. Qgs Gate Source Charge VGS= , VDS=-15V, ID=-5A nC. Qgd Gate Drain Charge nC. tD(on) Turn-On DelayTime ns tr Turn-On Rise Time VGS=-10V, VDS=-15V, RL=3 , ns tD(off) Turn-Off DelayTime RGEN=6 41 ns tf Turn-Off Fall Time 9 ns trr Body Diode Reverse Recovery Time IF=-5A, dI/dt=100A/ s 11 15 ns Qrr Body Diode Reverse Recovery Charge IF=-5A, dI/dt=100A/ s 5 nC. A. The value of R JA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25 C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150 C, using 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150 C. Ratings are based on low frequency and duty cycles to keep initialTJ=25 C. D. The R JA is the sum of the thermal impedence from junction to lead R JL and lead to ambient.

4 E. The static characteristics in Figures 1 to 6 are obtained using <300 s pulses, duty cycle max. F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150 C. The SOA curve provides a single pulse ratin g. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL. COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING. OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev 3: Mar. 2011 Page 2 of 5. AO4801A. TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS. 30 20. -10V VDS=-5V. 25 -3V 15. 20. -ID(A). -ID (A). 15 10 125 C. 10. 5 25 C. 5. VGS=-2V. 0 0. 0 1 2 3 4 5 0 1 2 3. -VDS (Volts) -VGS(Volts). Fig 1: On-Region Characteristics (Note E) Figure 2: Transfer Characteristics (Note E).

5 90 VGS= Normalized On-Resistance VGS= ID= 70 VGS=-10V. ID=-5A. RDS(ON) (m ). VGS= VGS17. = 50. 5. ID= 2. 30 10. VGS=-10V 1. 10 0 2 4 6 8 10 0 25 50 75 100 125 150 175. -ID (A). Temperature ( C) 0. Figure 3: On-Resistance vs. Drain Current and Figure 4: On-Resistance vs. Junction Temperature 18. Gate Voltage (Note E). (Note E). 100 +01. ID=-5A. +00. 80 40 125 C. 125 C RDS(ON) (m ). -IS (A). 60 25 C. 40 25 C. 20 0 2 4 6 8 10 -VGS (Volts) -VSD (Volts). Figure 5: On-Resistance vs. Gate-Source Voltage Figure 6: Body-Diode Characteristics (Note E). (Note E). Rev 3: Mar. 2011 Page 3 of 5. AO4801A. TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS. 5 1200. VDS=-15V. ID=-5A 1000. 4. Ciss Capacitance (pF). 800. -VGS (Volts). 3. 600. 2. 400. 1 Coss 200 Crss 0 0. 0 3 6 9 12 0 5 10 15 20 25 30. Qg (nC) -VDS (Volts). Figure 7: Gate-Charge Characteristics Figure 8: Capacitance Characteristics 10000. TJ(Max)=150 C. 10 s TA=25 C. RDS(ON) 1000. limited 100 s Power (W). -ID (Amps). 1ms 100. TJ(Max)=150 C 10ms TA=25 C 10.

6 1s 10s DC. 1. 10 1000. 1 10 100. -VDS (Volts) Pulse Width (s). Figure 9: Maximum Forward Biased Figure 10: Single Pulse Power Rating Junction-to- Safe Operating Area (Note F) Ambient (Note F). 10. D=Ton/T In descending order Z JA Normalized Transient TJ,PK=TA+ JA D= , , , , , , single pulse Thermal Resistance R JA=90 C/W. 1. PD. Single Pulse Ton T. 1 10 100 1000. Pulse Width (s). Figure 11: Normalized Maximum Transient Thermal Impedance (Note F). Rev 3: Mar. 2011 Page 4 of 5. AO4801A. Gate Charge Test Circuit & Waveform Vgs Qg - -10V. VDC. - + Vds Qgs Qgd VDC. +. DUT. Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL. Vds ton toff td(on) tr t d(off) tf Vgs - Vgs DUT VDC. Vdd 90%. Rg +. Vgs 10%. Vds Unclamped Inductive Switching (UIS) Test Circuit & Waveforms 2. L E AR= 1/2 LIAR. Vds Id Vds - BVDSS. Vgs Vgs VDC. Vdd Rg + Id I AR. DUT. Vgs Vgs Diode Recovery Test Circuit & Waveforms Vds + Q rr = - Idt DUT. Vgs t rr Vds - L -Isd -I F. Isd dI/dt + Vdd -I RM. Vgs VDC. Vdd Ig - -Vds Rev 3: Mar.

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