30V P-Channel MOSFET

1 AON6407. 30V P-Channel MOSFET . General Description Product Summary The AON6407 combines advanced trench MOSFET VDS -30. technology with a low resistance package to provide ID (at VGS= -10V) -85A. extremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS= -10V) < . and battery protection applications. RDS(ON) (at VGS = -6V) < . 100% UIS Tested 100% Rg Tested DFN5X6 Top View D. Top View Bottom View 1 8. 2 7. 3 6. 4 5. G. PIN1 S. Absolute Maximum Ratings TA=25 C unless otherwise noted Parameter Symbol Maximum Units Drain-Source Voltage VDS -30 V.

2 Gate-Source Voltage VGS 25 V. Continuous Drain TC=25 C -85. ID. Current G TC=100 C -67 A. C. Pulsed Drain Current IDM -200. Continuous Drain TA=25 C -32. IDSM A. Current TA=70 C Avalanche Current C IAS 45 A. Avalanche energy L= C EAS 101 mJ. TC=25 C 83. PD W. Power Dissipation B TC=100 C 33. TA=25 C PDSM W. Power Dissipation A TA=70 C Junction and Storage Temperature Range TJ, TSTG -55 to 150 C. Thermal Characteristics Parameter Symbol Typ Max Units Maximum Junction-to-Ambient A t 10s 14 17 C/W. R JA. Maximum Junction-to-Ambient A D Steady-State 40 55 C/W.

3 Maximum Junction-to-Case Steady-State R JC C/W. Rev 0: Oct. 2011 Page 1 of 6. AON6407. Electrical Characteristics (TJ=25 C unless otherwise noted). Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS. BVDSS Drain-Source Breakdown Voltage ID=-250 A, VGS=0V -30 V. VDS=-30V, VGS=0V -1. IDSS Zero Gate Voltage Drain Current A. TJ=55 C -5. IGSS Gate-Body leakage current VDS=0V, VGS= 25V 100 nA. VGS(th) Gate Threshold Voltage VDS=VGS, ID=-250 A V. ID(ON) On state drain current VGS=-10V, VDS=-5V -200 A. VGS=-10V, ID=-20A m.

4 RDS(ON) Static Drain-Source On-Resistance TJ=125 C VGS=-6V, ID=-20A 6 m . gFS Forward Transconductance VDS=-5V, ID=-20A 65 S. VSD Diode Forward Voltage IS=-1A,VGS=0V -1 V. IS Maximum Body-Diode Continuous Current G -85 A. DYNAMIC PARAMETERS. Ciss Input Capacitance 3505 pF. Coss Output Capacitance VGS=0V, VDS=-15V, f=1 MHz 900 pF. Crss Reverse Transfer Capacitance 650 pF. Rg Gate resistance VGS=0V, VDS=0V, f=1 MHz . SWITCHING PARAMETERS. Qg(10V) Total Gate Charge 75 105 nC. Qgs Gate Source Charge VGS=-10V, VDS=-15V, ID=-20A 13 nC.

5 Qgd Gate Drain Charge 23 nC. tD(on) Turn-On DelayTime 14 ns tr Turn-On Rise Time VGS=-10V, VDS=-15V, 16 ns tD(off) Turn-Off DelayTime RL= , RGEN=3 94 ns tf Turn-Off Fall Time 75 ns trr Body Diode Reverse Recovery Time IF=-20A, dI/dt=500A/ s 35 ns Qrr Body Diode Reverse Recovery Charge IF=-20A, dI/dt=500A/ s 75 nC. A. The value of R JA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25 C. The Power dissipation PDSM is based on R JA and the maximum allowed junction temperature of 150 C.

6 The value in any given application depends on the user's specific board design, and the maximum temperature of 150 C may be used if the PCB allows it. B. The power dissipation PD is based on TJ(MAX)=150 C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150 C. Ratings are based on low frequency and duty cycles to keep initial TJ =25 UIS current limited by test equipment.

7 D. The R JA is the sum of the thermal impedance from junction to case R JC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 s pulses, duty cycle max. F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150 C. The SOA curve provides IaASsingle pulse rating. G. The maximum current rating is package limited. H. These tests are performed with the device mounted on 1 in2 FR-4 board with EAS.

8 2oz. Copper, in a still air environment with TA=25 C. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL. COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING. OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev 0: Oct. 2011 Page 2 of 6. AON6407. TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS. 100 100. -5V VDS=-5V. -4V.

9 80 80. -6V. -10V. 60 60. -ID (A). -ID(A). 40 40 125 C. 20 20 25 C. VGS= 0 0. 0 1 2 3 4 5 1 2 3 4 5 6. -VDS (Volts) -VGS(Volts). Fig 1: On-Region Characteristics (Note E) Figure 2: Transfer Characteristics (Note E). 7 Normalized On-Resistance 6. VGS=-10V. ID=-20A. 5 VGS=-6V. ). RDS(ON) (m . 17. 4 5. 2. 3. VGS=-10V. VGS=-6V 10. 1 ID=-20A. 2. 1 0 5 1015 20 25 30 0 25 50 75 100 125 150 175. -ID (A) 0. Temperature ( C). Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 18 Temperature Figure 4: On-Resistance vs.

10 Junction (Note E). 12 +02. ID=-20A. 10 +01. 40. +00. 8 IAS. ). 125 C. RDS(ON) (m . EAS 125 C. -IS (A). 6. 4 25 C. 2 25 C 0 2 4 6 8 10 -VGS (Volts) -VSD (Volts). Figure 5: On-Resistance vs. Gate-Source Voltage Figure 6: Body-Diode Characteristics (Note E). (Note E). Rev 0: Oct. 2011 Page 3 of 6. AON6407. TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS. 10 5000. VDS=-15V. ID=-20A. 8 4000 Ciss Capacitance (pF). -VGS (Volts). 6 3000. 4 2000 Coss 2 1000. Crss 0 0. 0 10 20 30 40 50 60 70 80 0 5 10 15 20 25 30. Qg (nC) -VDS (Volts).