General Description Product Summary - Alpha and …

1 AO4294 General DescriptionProduct SummaryVDS ID (at VGS=10V) RDS(ON) (at VGS=10V)< 12m RDS(ON) (at VGS= )< Applications100% UIS Tested100% Rg TestedSymbolV Synchronus Rectification in DC/DC and AC/DC Converters Industrial and Motor Drive applications100 ParameterDrain-Source VoltageAbsolute Maximum Ratings TA=25 C unless otherwise notedVMaximumUnitsAO4294SO-8 Tape & Reel3000100V N-Channel MOSFETO rderable Part NumberPackage TypeFormMinimum Order Quantity100V Trench Power MV MOSFET technology Low RDS(ON) Low Gate Charge Optimized for fast-switching applicationsG DSSOIC-8 Top View Bottom View DDDDSSSGVDSVGSIDMIASA valanche energy L= SpikeVSPIKETJ, TSTGS ymbolt 10sSteady-StateSteady-StateR JLPower Dissipation C 10 VoltagePulsed Drain Current C9 Drain-Source VoltageContinuous DrainCurrentMaximum Junction-to-Lead C/W C/WMaximum Junction-to-Ambient A D167524VA 20 VMaximum Junction-to-Ambient A C/WR JA315940 ParameterMax CUnitsJunction and Storage Temperature Range-55 to 150 TypTA=25 CTA=70 CTA=25 CAvalanche Current CThermal.

2 April 1 of 5 SymbolMin Typ Max UnitsBVDSS100 VVDS=100V, VGS=0V1TJ=55 C5 IGSS 100nAVGS(th)Gate Threshold Qg(10V)3350nCQg( )1525nCQgs7nCQgd4nCtD(on)8nstr3nstD(off) 25nstf4nsReverse Transfer CapacitanceVGS=0V, VDS=50V, f=1 MHzVDS=VGS, ID=250 AOutput CapacitanceForward TransconductanceIS=1A,VGS=0 VVDS=5V, ID= , ID= , VGS= 20 VMaximum Body-Diode Continuous CurrentInput CapacitanceGate-Body leakage currentTurn-Off DelayTimeTurn-Off Fall TimeVGS=10V, VDS=50V, RL= ,RGEN=3 Diode Forward VoltageDYNAMIC PARAMETERSVGS= , ID= Rise TimeGate Source ChargeGate Drain ChargeTotal Gate ChargeSWITCHING PARAMETERSTurn-On DelayTimem VGS=10V, VDS=50V, ID= Gate ChargeElectrical Characteristics (TJ=25 C unless otherwise noted)

3 STATIC PARAMETERSP arameterConditionsGate resistancef=1 MHzIDSS AZero Gate Voltage Drain CurrentDrain-Source Breakdown VoltageID=250 A, VGS=0 VRDS(ON)Static Drain-Source On-Resistancetf4nstrr25nsQrr110nCTHIS Product HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISINGOUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE Product DESIGN,FUNCTIONS AND RELIABILITY WITHOUT Diode Reverse Recovery ChargeBody Diode Reverse Recovery TimeIF= , dI/dt=500A/ sTurn-Off Fall TimeIF= , dI/dt=500A/ sA.

4 The value of R JAis measured with the device mounted on 1in2FR-4 board with 2oz. Copper, in a still air environment with TA=25 C. The value in any given application depends on the user's specific board The power dissipation PDis based on TJ(MAX)=150 C, using 10s junction-to-ambient thermal Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150 C. Ratings are based on low frequency and duty cycles to keep initialTJ=25 The R JAis the sum of the thermal impedance from junction to lead R JLand lead to The static characteristics in Figures 1 to 6 are obtained using <300 s pulses, duty cycle These curves are based on the junction-to-ambient thermal impedance which is measured with the device mounted on 1in2FR-4 board with 2oz.

5 Copper, assuming a maximum junction temperature of TJ(MAX)=150 C. The SOA curve provides a single pulse rating. : April 2 of 5 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS02040608010012345ID(A)VGS (Volts)Figure 2: Transfer Characteristics (Note E)05101520051015202530 RDS(ON)(m )ID(A)Figure 3: On-Resistance vs. Drain Current and Gate On-ResistanceTemperature ( C)Figure 4: On-Resistance vs. Junction Temperature VGS= C125 CVDS=5 VVGS= (A)VDS(Volts)Figure 1: On-Region Characteristics (Note E)VGS= 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) + + (A)VSD(Volts)Figure 6: Body-Diode Characteristics (Note E)25 C125 CFigure 4: On-Resistance vs.

6 Junction Temperature (Note E)051015202530246810 RDS(ON)(m )VGS(Volts)Figure 5: On-Resistance vs. Gate-Source Voltage (Note E)ID= C125 C : April 3 of 5 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS024681005101520253035 VGS(Volts)Qg(nC)Figure 7: Gate-Charge Characteristics0500100015002000250030000 20406080100 Capacitance (pF)VDS(Volts)Figure 8: Capacitance CharacteristicsCissCossCrssVDS=50 VID= (Amps)VDS(Volts)V> or equal to s1msDCRDS(ON) limitedTJ(Max)=150 CTA=25 C100 1000 Power (W)Pulse Width (s)Figure 10: Single Pulse Power Rating JANormalized Transient Thermal ResistancePulse Width (s)Figure 11.

7 Normalized Maximum Transient Thermal Impedance (Note F)Single PulseD=Ton/TTJ,PK=TA+ JATonTPDMIn descending orderD= , , , , , , single pulseVGS> or equal to 9: Maximum Forward Biased Safe Operating Area (Note F)R JA=75 C/WFigure 10: Single Pulse Power Rating Junction-to-Ambient (Note F) : April 4 of 5 -+VDCIgVdsDUT-+VDCVgsVgs10 VQgQgsQgdChargeGate Charge Test Circuit & Waveform-+VDCDUTVddVgsVdsVgsRLRgVgsVds10 %90%Resistive Switching Test Circuit & Waveformsttrd(on)tontd(off)tftoffLUnclam ped Inductive Switching (UIS) Test Circuit & WaveformsVddVgsIdVgsRgDUT-+VDCLVgsVdsIdV gsBVIIgVgs-+VDCDUTLVdsVgsVdsIsdIsdDiode Recovery Test Circuit & WaveformsVds -Vds +IFARDSS2E = 1/2 LIdI/dtIRMrrVddVddQ = - IdtARARtrr : April 5 of 5