General Description Product Summary - Alpha and …

1 AONR21357 General DescriptionProduct SummaryVDS ID (at VGS=-10V)-34A RDS(ON) (at VGS=-10V)< RDS(ON) (at VGS= )< Applications100% UIS Tested100% Rg TestedSymbolVDSVGSIDMIASA valanche energy L= , TSTGS ymbolt 10sSteady-StateSteady-StateRqJC30V P-Channel MOSFETO rderable Part NumberPackage TypeFormMinimum Order Quantity-30V Latest advanced trench technology Low RDS(ON) High Current Capability RoHS and Halogen-Free CompliantTA=25 CTA=70 CTC=25 CTC=100 CTC=25 CAvalanche Current CContinuous DrainCurrentThermal CharacteristicsParameterMaxTA=70 CUnitsJunction and Storage Temperature Range-55 to 150 TypPDSMWTA=25 C5 Power Dissipation AMaximum Junction-to-Ambient A C/WRqJA204525 WIDA39A-136 IDSM-17mJ76-21-34 AONR21357 DFN 3x3 EPTape & Reel5000 VAAbsolute Maximum Ratings TA=25 C unless otherwise noted 25 VMaximumUnitsMaximum Junction-to-Case C/W C/WMaximum Junction-to-Ambient A Notebook AC-in load switch Battery protection charge/dischargePower Dissipation B12TC=100 CPD-3030 Gate-Source VoltagePulsed Drain Current VoltageContinuous DrainCurrent GDFN 3x3_EP Top View Bottom View Pin 1 G D S Top View SSSGDDDD1 2 3 4 8 7 6 5 PIN1.

2 February 1 of 6 AONR21357 SymbolMinTypMaxUnitsBVDSS-30 VVDS=-30V, VGS=0V-1TJ=55 C-5 IGSS 100nAVGS(th)Gate Threshold Qg(10V)5070nCQg( )2535nCQgs9nCQgd12nCtD(on) (off)125nstf66nstrr32nsQrr62nCAPPLICATIO NS OR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVEPRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT VGS=-10V, VDS=-15V, ID=-20 ATotal Gate ChargeElectrical Characteristics (TJ=25 C unless otherwise noted)STATIC PARAMETERSP arameterConditionsGate resistancef=1 MHzIDSS AZero Gate Voltage Drain CurrentDrain-Source Breakdown VoltageID=-250mA, VGS=0 VRDS(ON)Static Drain-Source On-ResistanceGate Source ChargeGate Drain ChargeTotal Gate ChargeSWITCHING PARAMETERSTurn-On DelayTimeVDS=0V, VGS= 25 VMaximum Body-Diode Continuous Current GInput CapacitanceGate-Body leakage currentBody Diode Reverse Recovery ChargeBody Diode Reverse Recovery TimeIF=-20A, di/dt=500A/msTurn-Off DelayTimeTurn-Off Fall TimeVGS=-10V, VDS=-15V, RL= ,RGEN=3 WDiode Forward VoltageDYNAMIC PARAMETERSVGS= , ID=-16 AIF=-20A, di/dt=500A/msTurn-On Rise TimeReverse Transfer CapacitanceVGS=0V, VDS=-15V, f=1 MHzVDS=VGS, ID=-250mAOutput CapacitanceForward TransconductanceIS=-1A, VGS=0 VVDS=-5V, ID=-20 AVGS=-10V, ID=-20AA.

3 The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25 C. The Power dissipation PDSM is based on R qJA t 10s and the maximum allowed junction temperature of 150 C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150 C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Single pulse width limited by junction temperature TJ(MAX)=150 C. D. The RqJA is the sum of the thermal impedance from junction to case RqJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300ms pulses, duty cycle max. F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150 C. The SOA curve provides a single pulse rating.

4 G. The maximum current rating is package limited. H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25 C. : February 2 of 6 AONR21357 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS02040608010012345-ID (A) -VGS (Volts) Figure 2: Transfer Characteristics (Note E) 05101520051015202530 RDS(ON) (mW) -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) + + (A) -VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) 25 C 125 C On-Resistance Temperature ( C) Figure 4: On-Resistance vs. Junction Temperature (Note E) VGS= ID=-16A VGS=-10V ID=-20A 0510152025246810 RDS(ON) (mW) -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) 25 C 125 C VDS=-5V VGS= VGS=-10V ID=-20A 25 C 125 C 020406080100012345-ID (A) -VDS (Volts) Figure 1: On-Region Characteristics (Note E) VGS=-3V -10V -4V : February 3 of 6 AONR21357 TYPICAL ELECTRICAL AND THERMAL (Amps) -VDS (Volts) -VGS> or equal to Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 10ms 1ms DC RDS(ON) limited TJ(Max)=150 C TC=25 C 100ms 10ms (W) Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-to-Case (Note F) 02468100102030405060-VGS (Volts) Qg (nC) Figure 7: Gate-Charge Characteristics 0500100015002000250030003500400005101520 2530 Capacitance (pF) -VDS (Volts) Figure 8: Capacitance Characteristics Ciss Normalized Transient Thermal Resistance Pulse Width (s) Figure 11.

5 Normalized Maximum Transient Thermal Impedance (Note F) Coss Crss VDS=-15V ID=-20A Single Pulse D=Ton/T TJ,PK=TC+ Ton T PDM In descending order D= , , , , , , single pulse TJ(Max)=150 C TC=25 C RqJC= C/W : February 4 of 6 AONR21357 TYPICAL ELECTRICAL AND THERMAL Normalized Transient Thermal Resistance Pulse Width (s) Figure 15: Normalized Maximum Transient Thermal Impedance (Note H) Single Pulse D=Ton/T TJ,PK=TA+ Ton T PDM In descending order D= , , , , , , single pulse 0153045600255075100125150 Power Dissipation (W) TCASE ( C) Figure 12: Power De-rating (Note F) 0153045600255075100125150 Current rating -ID (A) TCASE ( C) Figure 13: Current De-rating (Note F) (W) Pulse Width (s) Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note H) TA=25 C RqJA=55 C/W : February 5 of 6 AONR21357 VDCIgVdsDUTVDCVgsVgsQgQgsQgdChargeGate Charge Test Circuit & Waveform-+-+-10 VVddVgsIdVgsRgDUTVDCVgsVdsIdVgsUnclamped Inductive Switching (UIS) Test Circuit & WaveformsVdsL-+2E = 1/2 LIARARBVDSSIARIgVgs-+VDCDUTLVgsIsdDiode Recovery Test Circuit & WaveformsVds -Vds +dI/dtRMrrVddVddQ = - Idttrr-Isd-VdsF-I-IVDCDUTVddVgsVdsVgsRLR gResistive Switching Test Circuit & Waveforms-+VgsVdstttttt90%10%rond(off)fo ffd(on) : February 6 of 6