Transcription of 30V P-Channel MOSFET
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30V P-Channel MOSFET
AO4801A. 30V P-Channel MOSFET . General Description Product Summary The AO4801A combines advanced trench MOSFET VDS -30V. technology with a low resistance package to provide ID (at VGS=-10V) -5A. extremely low RDS(ON).This device is suitable for use as a RDS(ON) (at VGS=-10V) < 48m . load switch or in PWM applications. RDS(ON) (at VGS = ) < 57m . RDS(ON) (at VGS = ) < 80m . 100% UIS Tested 100% Rg Tested SOIC-8. D1 D2. Top View Bottom View SOIC-8. Top View S2 1 8 D2. G2 2 7 D2. S1 3 6 D1. G1 G2. G1 4 5 D1. S1 S2. Pin1. Absolute Maximum Ratings TA=25 C unless otherwise noted Parameter Symbol Maximum Units Drain-Source Voltage VDS -30 V. Gate-Source Voltage VGS 12 V. Continuous Drain TA=25 C -5. ID. Current TA=70 C -4 A. Pulsed Drain Current C IDM -28. Avalanche Current C IAS, IAR 17 A. Avalanche energy L= C EAS, EAR 14 mJ. TA=25 C 2. PD W. Power Dissipation B TA=70 C Junction and Storage Temperature Range TJ, TSTG -55 to 150 C. Thermal Characteristics Parameter Symbol Typ Max Units Maximum Junction-to-Ambient A t 10s 48 C/W.
AO4801A TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 17 5 2 10 0 18 40 0 5 10 15 20 0 0.5 1 1.5 2 2.5 3-V GS (Volts) Figure 2: Transfer Characteristics (Note E)-I
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