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ZXM61P03F 30V P-channel enhancement mode MOSFET …

1 SEMICONDUCTORSZXM61P03 FISSUE 1 - OCTOBER 200530V P-channel enhancement MODE MOSFETSUMMARYV(BR)DSS=-30V; RDS(ON)= ; ID= new generation of high density mosfets from Zetex utilizes a uniquestructure that combines the benefits of low on-resistance with fast switchingspeed. This makes them ideal for high efficiency, low voltage, powermanagement Low on-resistance Fast switching speed Low threshold Low gate drive SOT23 packageAPPLICATIONS DC - DC converters Power management functions Disconnect switches Motor controlORDERING INFORMATIONDEVICEREEL SIZE(inches)TAPE WIDTH(mm)QUANTITYPER REELZXM61P03 FTA78 embossed3,000 ZXM61P03 FTC138 embossed10,000 DEVICE MARKINGP03 SOT23 Pin outTop viewZXM61P03 FSEMICONDUCTORSISSUE 1 - OCTOBER 20052 THERMAL RESISTANCEPARAMETERSYMBOLVALUEUNITJ unction to Ambient (a)R JA200 C/WJunction to Ambient (b)

1 SEMICONDUCTORS ZXM61P03F ISSUE 1 - OCTOBER 2005 30V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V (BR)DSS=-30V; R DS(ON)=0.35 ; I D=-1.1A DESCRIPTION This new generation of high density MOSFETs from Zetex utilizes a unique

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  Dome, Enhancement, Channel, Mosfets, 30v p channel enhancement mode mosfet

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