Search results with tag "30v dual n channel mosfet"
30V Dual N-Channel MOSFET - aosmd.com
www.aosmd.com30V Dual N-Channel MOSFET General Description Product Summary VDS I D (at V GS =10V) 10A R DS(ON) (at V GS =10V) < 13mΩ R DS(ON) (at V GS =4.5V) < 17.5mΩ 100% UIS Tested 100% R g Tested Symbol VDS The AO4832 uses advanced trench technology to provide excellent R DS(ON) with low gate charge. This device is suitable for high side switch in SMPS and
30V Dual N-Channel MOSFET - Alpha & Omega Semiconductor
aosmd.comAO4842 Symbol Min Typ Max Units BV DSS 30 V 0.004 1 TJ=55°C 5 IGSS 100 nA VGS(th) 1.5 2.1 2.6 V ID(ON) 64 A 16.8 21 TJ=125°C 24 29 23.4 30 mΩ gFS 20 S VSD 0.75 1 V IS 2.4 A Ciss 373 448 pF Coss 67 pF Crss 41 pF Rg 1.8 2.8 Ω Qg(10V) 7.2 11 nC Qg(4.5V) 3.5 nC Qgs 1.3 nC Qgd 1.7 nC tD(on) 4.5 ns DYNAMIC PARAMETERS VGS =10V, V DS =15V, I D=7.7A Total Gate Charge Gate Drain …
30V Dual N-Channel MOSFET
www.aosmd.comAO4800 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 17 5 2 10 0 18 0 3 6 9 12 15 0 0.5 1 1.5 2 2.5 3 I D (A) VGS (Volts) Figure 2: Transfer Characteristics (Note E) 10
30V Dual N-Channel MOSFET
aosmd.comAO4812 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 17 5 2 10 0 18 40 0 5 10 15 1 1.5 2 2.5 3 3.5 4 4.5 VGS (Volts) Figure 2: Transfer Characteristics (Note E) I