Transcription of 30V Dual N-Channel MOSFET
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30V Dual N-Channel MOSFET
AO480030V dual N-Channel MOSFETG eneral DescriptionProduct SummaryVDS ID (at VGS=10V) RDS(ON) (at VGS=10V)< 27m RDS(ON) (at VGS = )< 32m RDS(ON) (at VGS = )< 50m 100% UIS Tested100% Rg TestedSymbolVDSThe AO4800 uses advanced trench technology to provideexcellent RDS(ON) and low gate charge. The two MOSFET smake a compact and efficient switch and synchronousrectifier combination for use in buck Maximum Ratings TA=25 C unless otherwise noted30 VDrain-Source Voltage30G2D2S2G1D1S1G1S1G2S2D1D1D2D2245 13867 Top ViewSOIC-8 Top View Bottom ViewPin1 VDSVGSIDMIAS, IAREAS, EARTJ, TSTGS ymbolt 10sSteady-StateSteady-StateR JL40 Maximum Junction-to-Ambient ATA=25 CAvalanche Current CW2 Maximum Junction-to-Lead C/W C/WMaximum Junction-to-Ambient A D329010A14TA=25 CTA=70 CPower Dissipation BPDA valanche energy L= CPulsed Dra
AO4800 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 17 5 2 10 0 18 0 3 6 9 12 15 0 0.5 1 1.5 2 2.5 3 I D (A) VGS (Volts) Figure 2: Transfer Characteristics (Note E) 10
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