PD-91279E IRF3205 - Infineon Technologies

1 IRF3205 HEXFET Power MOSFET01/25/01 Absolute Maximum JCJunction-to-Case CSCase-to-Sink, Flat, Greased C/WR JAJunction-to-Ambient 62 Thermal = 55 VRDS(on) = ID = 110A SDGTO-220 ABAdvanced HEXFET Power MOSFETs from InternationalRectifier utilize advanced processing techniques to achieveextremely low on-resistance per silicon area. Thisbenefit, combined with the fast switching speed andruggedized device design that HEXFET power MOSFET sare well known for, provides the designer with an extremelyefficient and reliable device for use in a wide variety TO-220 package is universally preferred for allcommercial-industrial applications at power dissipationlevels to approximately 50 watts.

2 The low thermalresistance and low package cost of the TO-220 contributeto its wide acceptance throughout the Process TechnologylUltra Low On-ResistancelDynamic dv/dt Ratingl175 C Operating TemperaturelFast SwitchinglFully Avalanche @ TC = 25 CContinuous Drain Current, VGS @ 10V 110 ID @ TC = 100 CContinuous Drain Current, VGS @ 10V 80 AIDMP ulsed Drain Current 390PD @TC = 25 CPower Dissipation200 WLinear Derating CVGSGate-to-Source Voltage 20 VIARA valanche Current 62 AEARR epetitive Avalanche Energy 20mJdv/dtPeak Diode Recovery dv/dt Junction and-55 to + 175 TSTGS torage Temperature RangeSoldering Temperature, for 10 seconds300 ( from case ) CMounting torque, 6-32 or M3 srew10 lbf in ( m) ParameterMin.

3 Typ. Max. Units ConditionsISContinuous Source CurrentMOSFET symbol(Body Diode) showing theISMP ulsed Source Currentintegral reverse(Body Diode) p-n junction Forward Voltage = 25 C, IS = 62A, VGS = 0V trrReverse Recovery Time 69104nsTJ = 25 C, IF = 62 AQrrReverse Recovery Charge 143215nCdi/dt = 100A/ s tonForward Turn-On TimeIntrinsic turn-on time is negligible (turn-on is dominated by LS+LD)Source-Drain Ratings and Characteristics110390A Starting TJ = 25 C, L = 138 H RG = 25 , IAS = 62A.

4 (See Figure 12) Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 )Notes: ISD 62A, di/dt 207A/ s, VDD V(BR)DSS, TJ 175 C Pulse width 400 s; duty cycle 2%.Electrical characteristics @ TJ = 25 C (unless otherwise specified) Calculated continuous current based on maximum allowable junction temperature. Package limitation current is Typ. Max. Units ConditionsV(BR)DSSD rain-to-Source Breakdown Voltage55 VVGS = 0V, ID = 250 A V(BR)DSS/ TJBreakdown Voltage Temp.

5 Coefficient V/ C Reference to 25 C, ID = 1mARDS(on)Static Drain-to-Source On-Resistance VGS = 10V, ID = 62A VGS(th)Gate Threshold = VGS, ID = 250 AgfsForward Transconductance44 SVDS = 25V, ID = 62A 25 AVDS = 55V, VGS = 0V 250 VDS = 44V, VGS = 0V, TJ = 150 CGate-to-Source Forward Leakage 100 VGS = 20 VGate-to-Source Reverse Leakage -100nAVGS = -20 VQgTotal Gate Charge 146ID = 62 AQgsGate-to-Source Charge 35nCVDS = 44 VQgdGate-to-Drain ("Miller") Charge 54 VGS = 10V, See Fig.

6 6 and 13td(on)Turn-On Delay Time 14 VDD = 28 VtrRise Time 101 ID = 62 Atd(off)Turn-Off Delay Time 50 RG = tfFall Time 65 VGS = 10V, See Fig. 10 Between lead, 6mm ( )from packageand center of die contactCissInput Capacitance 3247 VGS = 0 VCossOutput Capacitance 781 VDS = 25 VCrssReverse Transfer Capacitance 211 pF = , See Fig. 5 EASS ingle Pulse Avalanche Energy 1050 264 mJIAS = 62A, L = 138 HnHLDI nternal Drain InductanceLSInternal Source Inductance Leakage Current This is a typical value at device destruction and represents operation outside rated limits.

7 This is a calculated value limited to TJ = 175 2. Typical Output CharacteristicsFig 1. Typical Output CharacteristicsFig 3. Typical Transfer CharacteristicsFig 4. Normalized On-ResistanceVs. Temperature 1 10 100 1 10 10020 s PULSE WIDTHT = 25CJ , Drain-to-Source Voltage (V)I , Drain-to-Source Current (A) 1 10 100 1 10 10020 s PULSE WIDTHT = 175CJ , Drain-to-Source Voltage (V)I , Drain-to-Source Current (A) , Junction Temperature( C)R , Drain-to-Source On Resistance(Normalized)JDS(on) V=I=GSD10V107A 1 10 100 10004681012V = 25V20 s PULSE WIDTHDSV , Gate-to-Source Voltage (V)I , Drain-to-Source Current (A)

8 GSDT = 25 CJ T = 175 CJ 7. Typical Source-Drain DiodeForward VoltageFig 5. Typical Capacitance VoltageFig 6. Typical Gate Charge VoltageFig 7. Typical Source-Drain DiodeForward VoltageFig 8. Maximum Safe Operating Area110100 VDS, Drain-to-Source Voltage (V)0100020003000400050006000C, Capacitance(pF)CossCrssCissVGS = 0V, f = 1 MHZCiss = Cgs + Cgd, Cds SHORTEDCrss = Cgd Coss = Cds + Cgd0204060801001200246810121416Q , Total Gate Charge (nC)V , Gate-to-Source Voltage (V)GGSI=D62AV= 11 VDSV= 27 VDSV= 44 VDS 1 10 100 1000 10000 1 10 100 1000 OPERATION IN THIS AREA LIMITEDBY RDS(on) Single Pulse T T= 175 C= 25 C JCV , Drain-to-Source Voltage (V)

9 I , Drain Current (A)I , Drain Current (A) 1 10 100 ,Source-to-Drain Voltage (V)I , Reverse Drain Current (A)SDSDV = 0 V GST = 25 CJ T = 175 CJ 9. Maximum Drain Current TemperatureFig 10a. Switching Time Test CircuitVDS90%10%VGStd(on)trtd(off)tfFig 10b. Switching Time WaveformsFig 11. Maximum Effective Transient Thermal Impedance, Junction-to-CaseVDSP ulse Width 1 sDuty Factor % +-255075100125150175020406080100120T , Case Temperature( C)I , Drain Current (A) CDLIMITED BY PACKAGEFig 9.

10 Maximum Drain Current TemperatureFig 10a. Switching Time Test CircuitVDS90%10%VGStd(on)trtd(off)tfFig 10b. Switching Time WaveformsFig 11. Maximum Effective Transient Thermal Impedance, Junction-to-CaseVDSP ulse Width 1 sDuty Factor % 1 Notes:1. Duty factor D =t / t2. Peak T=Px Z+ T12 JDMthJCC PttDM12t , Rectangular Pulse Duration (sec)Thermal Response(Z ) = PULSE(THERMAL RESPONSE) F50K .2 F12 VCurrent RegulatorSame Type as Sampling Resistors+-10 VFig 13b. Gate Charge Test CircuitFig 13a.