IRHNJ57034 RADIATION HARDENED …

1 PD-93752F. IRHNJ57034 . RADIATION HARDENED JANSR2N7480U3. POWER MOSFET 60V, N-CHANNEL. SURFACE MOUNT ( ) REF: MIL-PRF-19500/703. 5 . TECHNOLOGY. Product Summary Part Number RADIATION Level RDS(on) ID QPL Part Number IRHNJ57034 100K Rads (Si) 22A* JANSR2N7480U3. IRHNJ53034 300K Rads (Si) 22A* JANSF2N7480U3. IRHNJ54034 500K Rads (Si) 22A* JANSG2N7480U3. IRHNJ58034 1000K Rads (Si) 22A* JANSH2N7480U3. International Rectifier's R5 TM technology provides Features: high performance power MOSFETs for space n Single Event Effect (SEE) HARDENED applications. These devices have been characterized n Ultra low RDS(on). for Single Event Effects (SEE) with useful performance n Low Total Gate Charge up to an LET of 80 (MeV/(mg/cm2)). The combination n Simple Drive Requirements of low Rdson and low gate charge reduces the power n Ease of Paralleling losses in switching applications such as DC to DC n Hermetically Sealed converters and motor control.

2 These devices retain n Surface Mount all of the well established advantages of MOSFETs n Ceramic Package such as voltage control, fast switching, ease of n Light Weight paralleling and temperature stability of electrical n ESD Rating: Class 1C per MIL-STD-750, parameters. Method 1020. Absolute Maximum Ratings Pre-Irradiation Parameter Units ID @ VGS = 12V, TC = 25 C Continuous Drain Current 22*. ID @ VGS = 12V, TC = 100 C Continuous Drain Current 21 A. IDM Pulsed Drain Current 88. PD @ TC = 25 C Max. Power Dissipation 75 W. Linear Derating Factor W/ C. VGS Gate-to-Source Voltage 20 V. EAS Single Pulse Avalanche Energy 100 mJ. IAR Avalanche Current 22 A. EAR Repetitive Avalanche Energy mJ. dv/dt Peak Diode Recovery dv/dt 10 V/ns TJ Operating Junction -55 to 150. T STG Storage Temperature Range o C. Pckg. Mounting Surface Temp. 300 (for 5s). Weight (Typical) g * Current is limited by package For footnotes refer to the last page 1.

3 03/12/13. IRHNJ57034 , JANSR2N7480U3 Pre-Irradiation Electrical Characteristics @ Tj = 25 C (Unless Otherwise Specified). Parameter Min Typ Max Units Test Conditions BVDSS Drain-to-Source Breakdown Voltage 60 V VGS = 0V, ID = BV DSS / T J Temperature Coefficient of Breakdown V/ C Reference to 25 C, ID = Voltage RDS(on) Static Drain-to-Source On-State VGS = 12V, ID = 21A.. Resistance VGS(th) Gate Threshold Voltage V VDS = VGS, ID = g fs Forward Transconductance 16 S VDS > =15V, IDS = 21A . IDSS Zero Gate Voltage Drain Current 10 VDS = 48V ,VGS = 0V. A. 25 VDS = 48V, VGS = 0V, TJ = 125 C. IGSS Gate-to-Source Leakage Forward 100 VGS = 20V. nA. IGSS Gate-to-Source Leakage Reverse -100 VGS = -20V. Qg Total Gate Charge 45 VGS =12V, ID = 22A. Q gs Gate-to-Source Charge 10 nC VDS = 30V. Q gd Gate-to-Drain ( Miller') Charge 15. td(on) Turn-On Delay Time 25 VDD = 30V, ID = 22A, tr Rise Time 100 VGS =12V, RG =.

4 Ns td(off) Turn-Off Delay Time 35. tf Fall Time 30. LS + LD Total Inductance nH Measured from the center of drain pad to center of source pad Ciss Input Capacitance 1152 VGS = 0V, VDS = 25V. C oss Output Capacitance 535 pF f = C rss Reverse Transfer Capacitance 42 . Source-Drain Diode Ratings and Characteristics Parameter Min Typ Max Units Test Conditions IS Continuous Source Current (Body Diode) 22*. A. ISM Pulse Source Current (Body Diode) 88. VSD Diode Forward Voltage V Tj = 25 C, IS = 22A, VGS = 0V . trr Reverse Recovery Time 125 ns Tj = 25 C, IF = 22A, di/dt 100A/ s Q RR Reverse Recovery Charge 322 nC VDD 50V . ton Forward Turn-On Time Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD. * Current is limited by package Thermal Resistance Parameter Min Typ Max Units Test Conditions RthJC Junction-to-Case C/W. RthJ-PCB Junction-to-PC board soldered to a 2 square copper-clad board Note: Corresponding Spice and Saber models are available on International Rectifier Web site For footnotes refer to the last page 2 RADIATION Characteristics Pre-Irradiation IRHNJ57034 , JANSR2N7480U3.

5 International Rectifier RADIATION HARDENED MOSFETs are tested to verify their RADIATION hardness capability. The hardness assurance program at International Rectifier is comprised of two RADIATION environments. Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison. Table 1. Electrical Characteristics @ Tj = 25 C, Post Total Dose Irradiation . Parameter Up to 500K Rads(Si)1 1000K Rads (Si)2 Units Test Conditions Min Max Min Max BVDSS Drain-to-Source Breakdown Voltage 60 60 V VGS = 0V, ID = VGS(th) Gate Threshold Voltage VGS = VDS, ID = IGSS Gate-to-Source Leakage Forward 100 100 nA VGS = 20V. IGSS Gate-to-Source Leakage Reverse -100 -100 VGS = -20 V. IDSS Zero Gate Voltage Drain Current 10 25 A VDS =48V, VGS =0V.

6 RDS(on) Static Drain-to-Source VGS = 12V, ID = 21A. On-State Resistance (TO-3). RDS(on) Static Drain-to-Source VGS = 12V, ID = 21A. On-State Resistance ( ). VSD Diode Forward Voltage V VGS = 0V, IS = 22A. 1. Part numbers IRHNJ57034 (JANSR2N7480U3), IRHNJ53034 (JANSF2N7480U3) and IRHNJ54034 (JANSG2N7480U3). 2. Part number IRHNJ58034 (JANSH2N7480U3). International Rectifier RADIATION HARDENED MOSFETs have been characterized in heavy ion environment for Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2. Table 2. Typical Single Event Effect Safe Operating Area LET Energy Range VDS (V). 2. (MeV/(mg/cm )) (MeV) ( m) @VGS = @VGS = @VGS = @VGS = @VGS =. 0V -5V -10V -15V -20V. 38 5% 300 38 60 60 60 60 30. 61 5% 330 31 10% 46 46 35 25 15. 84 5% 350 10% 28 35 30 25 20 14. 70. 60. Bias VDS (V). 50 LET=38 5%. 40 LET=61 5%. 30. LET=84 5%.

7 20. 10. 0. 0 -5 -10 -15 -20. Bias VGS (V). Fig a. Typical Single Event Effect, Safe Operating Area For footnotes refer to the last page 3. IRHNJ57034 , JANSR2N7480U3 Pre-Irradiation 1000 VGS 1000 VGS. TOP 15V TOP 15V. 12V 12V. 10V. I D , Drain-to-Source Current (A). 10V. I D , Drain-to-Source Current (A). 100 BOTTOM BOTTOM 100. 10. 10. 1. 20 s PULSE WIDTH 20 s PULSE WIDTH. TJ = 25 C TJ = 150 C. 1. 1 10 100 1 10 100. VDS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V). Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1000 ID = 22A. RDS(on) , Drain-to-Source On Resistance I D , Drain-to-Source Current (A). TJ = 25 C 100. (Normalized). TJ = 150 C. 10. V DS =15. 25V. 20 s PULSE WIDTH VGS = 12V. 1 5 7 9 11 13 15 -60 -40 -20 0 20 40 60 80 100 120 140 160. VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature ( C). Fig 3. Typical Transfer Characteristics Fig 4.

8 Normalized On-Resistance Vs. Temperature 4 Pre-Irradiation IRHNJ57034 , JANSR2N7480U3. 2500 20. VGS = 0V, f = 1 MHz ID = 22A. Ciss = Cgs + Cgd , Cds SHORTED VDS = 48V. Crss = Cgd VGS , Gate-to-Source Voltage (V). VDS = 30V. 2000 Coss = Cds + Cgd VDS = 12V. 15. C, Capacitance (pF). 1500. Ciss 10. 1000. Coss 5. 500. Crss FOR TEST CIRCUIT. SEE FIGURE 13. 0 0. 1 10 100 0 10 20 30 40. VDS , Drain-to-Source Voltage (V) QG , Total Gate Charge (nC). Fig 5. Typical Capacitance Vs. Fig 6. Typical Gate Charge Vs. Drain-to-Source Voltage Gate-to-Source Voltage 100 1000. OPERATION IN THIS AREA. LIMITED BY R DS(on). ISD , Reverse Drain Current (A). TJ = 150 C. ID, Drain-to-Source Current (A). 100. 10 100 s TJ = 25 C 1ms 10. 10ms 1. 1. Tc = 25 C. Tj = 150 C. Single Pulse DC. V GS = 0 V 1 10 100. VSD ,Source-to-Drain Voltage (V). VDS , Drain-to-Source Voltage (V). Fig 7. Typical Source-Drain Diode Fig 8.

9 Maximum Safe Operating Area Forward Voltage 5. IRHNJ57034 , JANSR2N7480U3 Pre-Irradiation 35 RD. VDS. LIMITED BY PACKAGE. 30 VGS. RG. +. ID , Drain Current (A). 25 -V DD. 20 V GS. Pulse Width 1 s Duty Factor %. 15. Fig 10a. Switching Time Test Circuit 10. VDS. 5 90%. 0. 25 50 75 100 125 150. TC , Case Temperature ( C). 10%. VGS. Fig 9. Maximum Drain Current Vs. td(on) tr t d(off) tf Case Temperature Fig 10b. Switching Time Waveforms 10. Thermal Response (Z thJC ). 1 D = PDM. SINGLE PULSE t1. (THERMAL RESPONSE). t2. Notes: 1. Duty factor D = t 1 / t 2. 2. Peak TJ = P DM x Z thJC + TC. 1. t1 , Rectangular Pulse Duration (sec). Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 6 Pre-Irradiation IRHNJ57034 , JANSR2N7480U3. 200. ID. EAS , Single Pulse Avalanche Energy (mJ). TOP 15V 14A. 160 BOTTOM 22A. L DRIVER. VDS. 120. RG +. - VDD 80. IAS A. VGS. 20V.

10 Tp . 40. Fig 12a. Unclamped Inductive Test Circuit 0. 25 50 75 100 125 150. Starting TJ , Junction Temperature ( C). V(BR)DSS. tp Fig 12c. Maximum Avalanche Energy Vs. Drain Current I AS. Current Regulator Fig 12b. Unclamped Inductive Waveforms Same Type as 50K . 12V .2 F. QG .3 F. +. 12 V V. QGS QGD - DS. VGS. VG. 3mA. IG ID. Charge Current Sampling Resistors Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit 7. IRHNJ57034 , JANSR2N7480U3 Pre-Irradiation Footnotes: Repetitive Rating; Pulse width limited by Pulse width 300 s; Duty Cycle 2%. maximum junction temperature. Total Dose Irradiation with VGS Bias. VDD = 25V, starting TJ = 25 C, L= 12 volt VGS applied and V DS = 0 during Peak IL = 22A, VGS = 12V irradiation per MIL-STD-750, method 1019, condition A. ISD 22A, di/dt 234A/ s, Total Dose Irradiation with VDS Bias. VDD 60V, TJ 150 C 48 volt VDS applied and V GS = 0 during irradiation per MlL-STD-750, method 1019, condition A.