60V N-Channel MOSFET

1 AON626060V N-Channel MOSFETG eneral DescriptionProduct SummaryVDS ID (at VGS=10V)85A RDS(ON) (at VGS=10V)< RDS(ON) (at VGS= )< 100% UIS Tested100% Rg TestedSymbolVDSD rain-Source Voltage60 The AON6260 uses trench MOSFET technology that isuniquely optimized to provide the most efficient highfrequency switching performance. Both conduction andswitching power losses are minimized due to anextremely low combination of RDS(ON), Ciss and device is ideal for boost converters and synchronousrectifiers for consumer, telecom, industrial power suppliesand LED Maximum Ratings TA=25 C unless otherwise noted60 VGDSTop View12348765 PIN1 DFN5X6 Top ViewBottom ViewVDSVGSIDMIASEASTJ, TSTGS ymbolt 10sSteady-StateSteady-StateR JCMaximum Junction-to-Ambient A C/WR JA144017V 20 Gate-Source VoltageDrain-Source Voltage60 UnitsJunction and Storage Temperature Range-55 to 150 CThermal CharacteristicsParameterTypMaxVmJAvalanc he Current C33 Continuous DrainCurrent21141A65 Avalanche energy L= CATA=25 CIDSMATA=70 CID8567TC=25 CTC=100 C340 Pulsed Drain Current CContinuous DrainCurrent GWPower Dissipation APDSMWTA=70 CTC=25 CPower Dissipation BPDM aximum Junction-to-Case C/W C/WMaximum Junction-to-Ambient A.

2 July 1 of 6 AON6260 SymbolMinTypMaxUnitsBVDSS60 VVDS=60V, VGS=0V1TJ=55 C5 IGSS 100nAVGS(th)Gate Threshold Qg(10V)81115nCQg( )3752nCQgs17nCQgd12nCtD(on) Transfer CapacitanceVGS=0V, VDS=30V, f=1 MHzVDS=VGS, ID=250 ATurn-On Rise TimeTurn-Off DelayTimeVGS=10V, VDS=30V, RL= ,R=3 Turn-On DelayTimeGate resistancef=1 MHzTotal Gate ChargeGate Source ChargeGate Drain ChargeTotal Gate ChargeSWITCHING PARAMETERSVGS=10V, VDS=30V, ID=20 AElectrical Characteristics (TJ=25 C unless otherwise noted)STATIC PARAMETERSP arameterConditionsIDSS AZero Gate Voltage Drain CurrentDrain-Source Breakdown VoltageID=250 A, VGS=0 VVDS=0V, VGS= 20 VMaximum Body-Diode Continuous Current GInput CapacitanceOutput CapacitanceForward TransconductanceIS=1A,VGS=0 VVDS=5V, ID=20 ADYNAMIC PARAMETERSVGS= , ID=20 ARDS(ON)Static Drain-Source On-ResistanceDiode Forward Voltagem VGS=10V, ID=20 AGate-Body leakage currenttD(off) PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET.

3 APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISINGOUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT Diode Reverse Recovery ChargeBody Diode Reverse Recovery TimeIF=20A, dI/dt=500A/ sTurn-Off DelayTimeRGEN=3 Turn-Off Fall TimeIF=20A, dI/dt=500A/ sA. The value of R JAis measured with the device mounted on 1in2FR-4 board with 2oz. Copper, in a still air environment with TA=25 C. The Power dissipation PDSMis based on R JAt 10s and the maximum allowed junction temperature of 150 C. The value in any given application depends on the user's specific board The power dissipation PDis based on TJ(MAX)=150 C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used.

4 C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150 C. Ratings are based on low frequency and duty cycles to keep initial TJ =25 The R JAis the sum of the thermal impedance from junction to case R JCand case to The static characteristics in Figures 1 to 6 are obtained using <300 s pulses, duty cycle These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150 C. The SOA curve provides a single pulse rating. G. The maximum current rating is package limited. H. These tests are performed with the device mounted on 1 in2FR-4 board with 2oz. Copper, in a still air environment with TA=25 C.

5 : July 2 of 6 AON6260 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS1752100180204060801001234 5ID(A)VGS(Volts)Figure 2: Transfer Characteristics (Note E)0246051015202530 RDS(ON)(m )ID(A)Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) On-ResistanceTemperature ( C)Figure 4: On-Resistance vs. Junction Temperature (Note E)VGS= C125 CVDS=5 VVGS= (A)VDS(Volts)Fig 1: On-Region Characteristics (Note E)VGS= + + + (A)VSD(Volts)Figure 6: Body-Diode Characteristics (Note E)25 C125 C(Note E)0246246810 RDS(ON)(m )VGS(Volts)Figure 5: On-Resistance vs. Gate-Source Voltage (Note E)ID=20A25 C125 C : July 3 of 6 AON6260 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS1752100180246810010203040 5060708090 VGS(Volts)Qg(nC)Figure 7: Gate-Charge Characteristics0100020003000400050006000 70000102030405060 Capacitance (pF)VDS(Volts)Figure 8: Capacitance (W)Pulse Width (s)CossCrssVDS=30 VID=20 ATJ(Max)=150 CTC=25 C10 (Amps)VDS(Volts)VGS> or equal to Figure 9: Maximum Forward Biased 10 s10ms1msDCRDS(ON) limitedTJ(Max)=150 CTC=25 C100 s40 Figure 10: Single Pulse Power Rating Junction-to-Case (Note F) JCNormalized Transient Thermal ResistancePulse Width (s)Figure 11.

6 Normalized Maximum Transient Thermal Impedance (Note F)Single PulseD=Ton/TTJ,PK=TC+ JCTonTPDIn descending orderD= , , , , , , single pulseFigure 9: Maximum Forward Biased Safe Operating Area (Note F)R JC= C/W : July 4 of 6 AON6260 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS1752100180204060801001200 255075100125150 Power Dissipation (W)TCASE( C)Figure 13: Power De-rating (Note F)0204060801000255075100125150 Current rating ID(A)TCASE( C)Figure 14: Current De-rating (Note F) (W)Pulse Width (s)Figure 15: Single Pulse Power Rating Junction-to-TA=25 C11010010001101001000 IAR (A) Peak Avalanche Current Time in avalanche, tA( s)Figure 12: Single Pulse Avalanche capability (Note C)TA=25 CTA=150 CTA=100 CTA=125 JANormalized Transient Thermal ResistancePulse Width (s)Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)Single PulseD=Ton/TTJ,PK=TA+ JATonTPDIn descending orderD= , , , , , , single pulseFigure 14: Current De-rating (Note F)Figure 15: Single Pulse Power Rating Junction-to-Ambient (Note H)R JA=55 C/W.

7 July 5 of 6 AON6260 -+VDCIgVdsDUT-+VDCVgsVgs10 VQgQgsQgdChargeGate Charge Test Circuit & Waveform-+VDCDUTVddVgsVdsVgsRLRgVgsVds10 %90%Resistive Switching Test Circuit & Waveformsttrd(on)tontd(off)tftoffId+LVds BVUnclamped Inductive Switching (UIS) Test Circuit & WaveformsVdsDSS2E = 1/2 LIARARVddVgsVgsRgDUT-+VDCVgsIdVgsIIgVgs- +VDCDUTLVgsVdsIsdIsdDiode Recovery Test Circuit & WaveformsVds -Vds +IFARdI/dtIRMrrVddVddQ = - Idttrr : July 6 of 6