Transcription of Atomic Layer Deposition - ALD Academy
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Atomic Layer Deposition - ALD Academy
Atomic Layer Deposition Harm Knoops, Stephen E. Potts, Ageeth A. Bol, and (Erwin) Kessels Eindhoven University of Technology Photo: Area-selective Atomic Layer Deposition research in Eindhoven, the Netherlands. (Photo by Bart van Overbeeke) Please cite this chapter as: Knoops, Potts, Bol, and Kessels, Ch. 27 - Atomic Layer Deposition (pp. 1101 1134) in Handbook of Crystal Growth, edited by T. Kuech (Elsevier, 2015). doi: FOR TEACHING AND SCHOLARLY USE ONLY - DO NOT DISTRIBUTE 1 Abstract Atomic Layer Deposition (ALD), also referred to historically as Atomic Layer epitaxy (ALE), is a vapor-phase Deposition technique for preparing ultrathin films with precise growth control. ALD is currently rapidly evolving, mostly driven by the continuous trend to miniaturize electronic devices. In addition many other innovative technologies are increasingly benefitting from the high-quality thin films. This chapter describes on an elementary level the key features of ALD.
silicon-based microelectronics industry began to in-crease.4,6 At that time, the method was also coined atom-ic layer deposition (ALD), a name which was more appro-priate considering the fact that the interest in amorphous films strongly increased. This increase was most promi-nent in highly-insulating oxide films to be used as low-
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