Transcription of Axial Lead Rectifiers - ON Semiconductor
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Axial Lead Rectifiers - ON Semiconductor
DATA Semiconductor Components Industries, LLC, 2006 August, 2021 Rev. 111 Publication Order Number:1N5817/DAxial Lead RectifiersSCHOTTKY BARRIER AMPERE 20, 30 and 40 VOLTS1N5817, 1N5818, 1N5819 This series employs the Schottky Barrier principle in a large areametal to silicon power diode. State of the art geometry featureschrome barrier metal, epitaxial construction with oxide passivationand metal overlap contact. Ideally suited for use as Rectifiers inlow voltage, high frequency inverters, free wheeling diodes, andpolarity protection Extremely Low VF Low Stored Charge, Majority Carrier Conduction Low Power Loss/High Efficiency These are Pb Free Devices*Mechanical Characteristics: Case: Epoxy, Molded Weight: Gram (Approximately) Finish: All External Surfaces Corrosion Resistant and TerminalLeads are Readily Solderable Lead Temperature for Soldering Purposes:260 C Max for 10 Seconds Polarity: Cathode Indicated by Polarity Band ESD Ratings: Machine Model = C (>400 V)Human Body Model = 3B (>8000 V)*For additional information on our Pb Free strategy and soldering details, pleasedownload the onsemi Soldering and Mounting Techniques Reference Manual, detailed or
metal−to−silicon power diode. State−of−the−art geometry features chrome barrier metal, epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low−voltage, high−frequency inverters, free wheeling diodes, and polarity protection diodes. Features • Extremely Low VF
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