Transcription of Bootstrap Circuitry Selection for Half Bridge Configurations
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Bootstrap Circuitry Selection for Half Bridge Configurations
1 SLUA887 August2018 SubmitDocumentationFeedbackCopyright 2018,TexasInstrumentsIncorporatedBootstr apCircuitrySelectionfor half -BridgeConfigurationsApplicationRepo rtSLUA887 August2018 BootstrapCircuitrySelectionfor half -BridgeConfigurationsMamadouDiallo,H ighPowerDriversABSTRACTD rivingMOSFETsin half -bridgeconfigurationspresentmanychal lengesfor thosechallengesis generatingbiasfor the bootstrapcircuittakescareof this ,TI's 620 Vhalf-bridgegatedriverwith interlockto presentthe differentcomponentsin a bootstrapcircuitand how to properlyselectthemin orderto ensurepredictableswitchingof the of to to BootstrapDiodeReverseRecoveryTime(Zoomed Out)..55HB_HSRingingEffectson (Rboot= 0 Ohms)..77 VDD/HB-HSFastRampUp (Rboot= ).. of Tables1 IntroductionWhenusinghalf-bridgeconfigur ations,it is necessaryto generatehigh-sidebias to drivethe gateof thehigh-sideFET referencedto the of the mostpopularand cost effectiveway fordesignersto do so is the use of a bootstrapcircuitwhichconsistsof a capacitor,a diode,a resistorand applicationreportwill explainhow this circuitworks,the key componentsof the bootstrapcircuitsand theirimpactin the app notewill put emphasison half -bridgegatedrivesusingdriverswith no built-inbootstrapdiode,whichgivesdesigne rsflexibilityand reducespowerdissipationin the gatedriverIC.
It is generally recommended to use low ESR and ESL surface mount multi-layer ceramic capacitors (MLCC) with good voltage ratings (2xVDD), temperature coefficients and capacitance tolerances. Bootstrap Components Selection www.ti.com 4 SLUA887–August 2018 Submit Documentation Feedback
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