Transcription of C106 - Silicon Controlled Rectifiers
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C106 - Silicon Controlled Rectifiers
1 Publication Order Number:C106/DC106 SeriesSensitive Gate SiliconControlled RectifiersReverse Blocking ThyristorsGlassivated PNPN devices designed for high volume consumerapplications such as temperature, light, and speed control; process andremote control, and warning systems where reliability of operation Glassivated Surface for Reliability and Uniformity Power Rated at Economical Prices Practical Level Triggering and Holding Characteristics Flat, Rugged, Thermopad Construction for Low Thermal Resistance,High Heat Dissipation and Durability Sensitive Gate Triggering These are Pb Free DevicesMAXIMUM RATINGS (TJ = 25 C unless otherwise noted)CharacteristicSymbolMaxUnitPeak Repetitive Off State Voltage (Note 1)(Sine Wave, 50 60 Hz, RGK = 1 kW,TC = 40 to 110 C)C106BC106D, C106D1*C106M, C106M1*VDRM,VRRM200400600 VOn-State RMS Current(180 Conduction Angles, TC = 80 C)IT(RMS) On State Current(180 Conduction Angles, TC = 80 C)IT(AV) Non-Repetitive Surge Current(1/2 Cycle, Sine Wave, 60 Hz, TJ = +25 C)ITSM20 ACircuit Fusing Considerations (t = ms)
1 Publication Order Number: C106/D C106 Series Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors Glassivated PNPN devices designed for high volume consumer
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