Transcription of Chapter 16 Selecting a MOSFET Model
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: 1 Thu Jul 23 19:10:43 1998 Star-Hspice Manual, Release 16 Selecting a MOSFET ModelNow that you know more about MOSFET models from Chapter 15, Introducing MOSFET . it will be easier for you to choose which type of modelsyou require for your Chapter lists the various MOSFET models, and provides the specificationsfor each Model . The following topics are covered in this Chapter :nLevel 1 IDS: Schichman-Hodges ModelnLevel 2 IDS: Grove-Frohman ModelnLevel 3 IDS: Empirical ModelnLevel 4 IDS: MOS ModelnLevel 5 IDS ModelnLevel 6 and Level 7 IDS: MOSFET ModelnLevel 7 IDS ModelnLevel 8 IDS ModelnLevel 13 BSIM ModelnLevel 27 SOSFET ModelnLevel 28 Modified BSIM ModelnLevel 38 IDS: Cypress Depletion ModelnLevel 39 BSIM2 ModelnLevel 40 HP a-Si TFT ModelnLevel 47 BSIM3 Version 2 MOS ModelnLevel 49 BSIM3 Version 3 MOS ModelnLevel 50 Philips MOS9 ModelnComparing MOS : 2 Thu Jul 23 19:10:43 1998 Level 1 IDS: Schichman-Hodges ModelSelecting a MOSFET Model16-2 Star-Hspice Manual, Release 1 IDS: Schichman-Hodges ModelThis section describes the parameters and equations for the Level 1 IDS:Schichman-Hodges Model .
time can be about half that of a simulation using the Level 2 model. The agreement in timing is approximately 10%. The Level 1 model, however, results in severe inaccuracies in DC transfer functions of TTL-compatible input buffers, if these buffers are present in the circuit. The channel-length modulation parameter LAMBDA is equivalent to the
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