Transcription of Complementary low voltage transistor - STMicroelectronics
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Complementary low voltage transistor - STMicroelectronics
May 2008 Rev 51/99BD135 - BD136BD139 - BD140 Complementary low voltage transistorFeatures Products are pre-selected in DC current gainApplication General purposeDescriptionThese epitaxial planar transistors are mounted in the SOT-32 plastic package. They are designed for audio amplifiers and drivers utilizing Complementary or quasi- Complementary circuits. The NPN types are the BD135 and BD139, and the Complementary PNP types are the BD136 and BD140. Figure schematic diagram321 SOT-32 NPNPNPT able summaryOrder - BD136 - BD139 - BD1402/9 Contents1 Electrical ratings .. 32 Electrical characteristics .. characteristics (curves) .. 53 Package mechanical data .. 64 Revision history .. 8BD135 - BD136 - BD139 - BD140 Electrical ratings3/91 Electrical ratingsTable maximum ratingsSymbolParameterValueUnitNPNPNPBD1 35 BD139 BD136 BD140 VCBOC ollector-base voltage (IE = 0)4580-45-80 VVCEOC ollector-emitter voltage (IB = 0)4580-45-80 VVEBOE mitter-base voltage (IC = 0)5-5 VICC ollector Collector peak current3-3 AIBBase Total dissipation at Tc 25 Total dissipation at Tamb 25 temperature-65 to 150 CTjMax.
1. Pulsed: pulse duration = 300 µs, duty cycle 1.5% Collector-emitter sustaining voltage (IB=0) NPN IC = 30 mA BD135 BD139 45 80 V V PNP IC = -30 mA BD136 BD140-45-80 V V VCE(sat) (1) Collector-emitter saturation voltage NPN IC = 0.5 A, IB = 0.05 A 0.5 V PNP IC = -0.5 A, IB = -0.05 A -0.5 V VBE (1) Base-emitter voltage NPN IC = 0.5 A, VCE = 2 ...
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