Transcription of Power MOSFET - Vishay Intertechnology
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Power MOSFET - Vishay Intertechnology
Document Number: A, 28-Jul-081 Power MOSFETIRFP460, SiHFP460 Vishay SiliconixFEATURES Dynamic dV/dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole Fast Switching Ease of Paralleling Simple Drive Requirements Lead (Pb)-free AvailableDESCRIPTIONT hird generation Power MOSFETs from Vishay provide thedesigner with the best combination of fast switching,ruggedized device design, low on-resistance andcost-effectiveness. The TO-247 package is preferred for commercial-industrialapplications where higher Power levels preclude the use ofTO-220 devices. The TO-247 is similar but superior to theearlier TO-218 package because its isolated mounting also provides greater creepage distances between pins tomeet the requirements of most safety Repetitive rating; pulse width limited by maximum junction temperature (see fig.)
Pulsed diode forward current a ISM-- 80 Body diode voltage VSD TJ = 25 °C, IS = 20 A, VGS = 0 Vb-- 1.8V Body diode reverse recovery time trr TJ = 25 °C, IF = 20A, dI/dt = 100 A/μsb - 570 860 ns Body diode reverse recovery charge Qrr-5.7 8.6μC Forward turn-on time ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD) D ...
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