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DRAM Technology - Smithsonian Institution

OVERVIEWDRAM (Dynamic Random Access Memory) is the main memory used for all desktop and largercomputers. Each elementary DRAM cell is made up of a single MOS transistor and a storagecapacitor (Figure 7-1). Each storage cell contains one bit of information. This charge, however,leaks off the capacitor due to the sub-threshold current of the cell transistor. Therefore, the chargemust be refreshed several times each second. HOW THE DEVICE WORKSThe memory cell is written to by placing a 1 or 0 charge into the capacitor cell.

DRAM Technology INTEGRATED CIRCUITENGINEERING CORPORATION 7-7 256K 1M 4M 16M 64M 256M 1G 4G 10-1 1 101 102 103 10 1.0 0.1 0.01 DRAM Generation (bits) Chip Area (mm 2), Cell Area (µ m 2) Minim um Feature Siz e (µ m 2) Source: Hitachi/ICE, "Memory 1997" 20775A Cell Area Chip Area Minimum Feature Size Figure 7-10. DRAM Technology Trend

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smithsonianchips.si.edu

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smithsonianchips.si.edu

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