Transcription of 先端GaN-HEMTデバイス技術 - fujitsu.com
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先端GaN-HEMTデバイス技術 - fujitsu.com
GaN-HEMT GaN-HEMT Technology for Future Applications WiMAX Worldwide Interoperability for Microwave Access GaN HEMT High Electron Mobility Transistor GaN-HEMT MIS Metal Insulator Semiconductor 3 V 800 mA/mm 320 V GaN Abstract We investigated future power applications of GaN high electron mobility transistors (HEMTs) after successfully developing a high-efficiency GaN-HEMT amplifier for mobile Worldwide Interoperability for Microwave Access (WiMAX) base stations.
先端gan-hemtデバイス技術 の方法ではエッチング深さのコントロールが難しい という問題がある。著者らは既に，新規キャップ構
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