Transcription of 先端GaN-HEMTデバイス技術 - fujitsu.com
1 GaN-HEMT GaN-HEMT Technology for Future Applications WiMAX Worldwide Interoperability for Microwave Access GaN HEMT High Electron Mobility Transistor GaN-HEMT MIS Metal Insulator Semiconductor 3 V 800 mA/mm 320 V GaN Abstract We investigated future power applications of GaN high electron mobility transistors (HEMTs) after successfully developing a high-efficiency GaN-HEMT amplifier for mobile Worldwide Interoperability for Microwave Access (WiMAX) base stations.
2 Its excellent material properties also make the GaN-HEMT a good candidate for future power electronic devices, which must operate with a high drain current and high voltage. Fabricated normally-off GaN-HEMT devices showed a threshold voltage of 3 V, maximum drain current of 800 mA/mm, and off-state breakdown voltage of 320 V. These characteristics are attributed to the novel cap layer that enhances the electron density, a recessed gate structure, and a metal-insulator-semiconductor structure. These results show the potential of normally-off GaN based devices for future power electronic application.
3 GaN-HEMT GaN-HEMT GaN-HEMT fujitsu . 60, 5, p. 413-416 (09, 2009) 413 GaN-HEMT GaN HEMT High Electron Mobility Transistor 2 GaN MOS Si-LDMOS LDMOS Laterally Diffused Metal Oxide Semiconductor GaAs FET WiMAX Worldwide Interoperability for Microwave Access (1) GaN-HEMT RF -1 Si Si -1 GaN-HEMT Si GaN-HEMT GaN-HEMT
4 MIS Metal Insulator Semiconductor GaN MIS-HEMT -2 GaN MIS-HEMT GaN (V)100100010 (m cm2)GaN SiC Si AlN n GaN SiC GaN Al2O3 n AlGaN n GaN 2 -2 GaN MIS-HEMT -1 between breakdown voltage and on-resistance for high power devices. MIS-HEMT structures with novel triple cap layer used in this work.
5 414 fujitsu . 60, 5, (09, 2009) GaN-HEMT V 520 mA/mm (2) GaN MIS-HEMT ALD Atomic Layer Deposition ALD 0200400600800-4 -22 4 6 8 10050100150 mS/mm 0 V mA/mm Vth 3V 10 V a Vgs=0 V(pinch-off condition)320V2500 Vgs=0 V(pinch-off condition)
6 320V2500 b 0250320 VVgs 0V pinch-off condition V 5mA/div MIS-HEMT -3 a 7 m m 5 m 3 V 0 V 9 A/mm 10 V 800 mA/mm V 10 V -3 GaN MIS-HEMT for GaN MIS-HEMT device in this work. 0 V 320 V -3 b RF 5 m 10 m GaN-HEMT GaN-HEMT -4 fujitsu .
7 60, 5, (09, 2009) 415 GaN-HEMT Vds Vgs 50 V 0V Vgs 10 VVgs 8 VVgs 6 VVgs 4 VVgs 2V020040060080001020304050 V mA/mm Vds Vgs 0V 0V Vds Vgs -4 GaN MIS-HEMT I-V I-V characteristics for GaN MIS-HEMT device used in this work. 0 V 0 V 50 V 0 V 50 V 0 V GaN MIS-HEMT ALD GaN MIS-HEMT ALD 3 V 300 V GaN 1 WiMAX GaN-HEMT fujitsu Vo l.
8 6 0 2009 2 T Ohki et al An over 100 W AlGaN/GaN enhancement-mode HEMT power amplifier with piezoelectric-induced cap structure physica status solidi c Vo l . 6 Issue 6 1365-1368 2009 416 fujitsu . 60, 5, (09, 2009)
