Transcription of 無線通信用GaN HEMTの開発 - sei.co.jp
1 2018 1 SEI 192 69 1. GaN Si GaAs SiC GaN HEMT 1 Gallium Nitride High Electron Mobility Transistor 2000 1 1 1 GHz 30 GHz GaAs Si GaN HEMT GaN HEMT GaN HEMT 2. GaN HEMT 2 1 1 GaN Si GaAs 2 vsat Si 10 GaAs Ec vsat Ec/2 Johnson GaN HEMT GaN HEMT 400W Doherty GaN HEMT GaN HEMT GaN HEMT GaN HEMT Gallium nitride (GaN) high-electron-mobility transistors (HEMTs) have been widely used for cellular base stations and other high-power and high-frequency applications owing to their superior material properties.
2 This paper describes the features and characteristics of the world s first commercialized GaN HEMTs. Specifically, it introduces our 400W GaN HEMT Doherty amplifier for cellular base stations and 20W broad band GaN HEMT for fixed wireless communications. For satellite communications and weather radars, we have also developed a high-power and high-reliability GaN HEMT. These GaN HEMTs contribute to the creation of small-form-factor, light-weight, and power-efficient transmitters for wireless communication. GaN HEMT GaN HEMT GaN HEMT for Wireless Communication Seigo Sano Kaname Ebihara Takashi Yamamoto Tomio Satoh Naoyuki Miyazawa 1 70 GaN HEMT Johnson GaN Si 27 GaAs 15 GaN 2 1 GaN 2 2 GaN HEMT 3 GaN HEMT GaN AlGaN 2 GaN SiC 4 GaN HEMT Ids-Vds Vgs + 3 BVdsx 290V 3 GaN HEMT 50V GaN HEMT Mean Time To Failure.
3 MTTF 5 1 SiGaAsGaN eV 107 cm/s MV/cm cm2/V s 130060001500 W/cm K 1 Johnson 2 3 GaN HEMT (A/mm)Vds(V)BVdsx= 290 VVgs= -6 to +2 V V step 4 GaN HEMT Ids-Vds 5 GaN HEMT MTTF2018 1 SEI 192 71 200 C 100 MTTF 3. GaN HEMT 4 1 GHz 3 GHz L 6dB 10dB 40W 400 W Doherty 1936 Bell W. H. Doherty 6 AB C 6dB 6dB Doherty 2 1 200W GaN HEMT EGN21C210I2D 2 Doherty 2 Doherty 400W 6dB 54 GaN HEMT 4.
4 GaN HEMT3 6 GHz 28 GHz 4 GaAs FET 2 GaN HEMT 3 3 3 20W GaN HEMT SGK5872-20A GaN HEMT 50 GaN HEMT GaAs FET 10V 2 24V 6 Doherty 1 GaNHEMT EGN21C210I2D 2 Doherty 2 EGN21CI2D Doherty 50V 56 400 dBm W 6dB 16dB6dB 54 3 GaN HEMT SGK5872-20A 72 GaN HEMT 2 6 GHz 7 GHz 2 SiC , 5. GaN HEMT HUB VSAT Very Small Aperture Terminal 14 GHz,30 GHz TWT Traveling Wave Tube GaN HEMT GaN HEMT 4 14 GHz GaN HEMT SGK1314-60A 4 6.
5 GaN HEMT TWT GaN HEMT GaAs FET GaAs FET GaN HEMT GaN HEMT 5 L 200W GaN HEMT 7 Tc 45 C 210W 71 MIL-PRF-19500 GaN HEMT SQT 3 SGK5872-20A 24V 43 20 dBm W 41 12dB 4 GaN HEMT SGK1314-60A dBm (210W) 71% B GL Test Condition : VD S=50V, ID S(DC)=700mA , CW operation at f=1. 58 GHz, Tcase=45degC Pout DE PAE Pout Gain DE PAE 5 L 200W GaN HEMT 7 L 200 W GaN HEMT 4 SGK1314-60A 24V 48 60 dBm W 32 1 SEI 192 73 5 SEE 3 GaN HEMT 4 7.
6 GaN HEMT kW kW GaN HEMT 5 6 GaN HEMT 6 S 600W GaN HEMT X GaN HEMT 6. 2000 GaN HEMT GaN HEMT 25 2 6 1 HEMTHigh Electron Mobility Transistor 2 2 GaAs FETG allium Arsenide Field Effect Transistor 5 3 SEES ingle Event Effect 1 5 SEE RF 132Xe [MeV]650 [ /cm2] 3 105 [ /cm2/sec] 3000 LET 8 Si MeV/(mg/cm2)
7 ] Vds 53V Ids DC 250mA 4dB 6 GaN HEMT 6 GaN HEMT S 600 WSGN2729-600H-RX 200 WSGC8598-200A-R Vds50 V50 V 200 sec100 sec 10 10 GHz Psat680 W250 W dB PAE59 38 74 GaN HEMT 1 H. Sano , A 40W GaN HEMT Doherty Power Amplifier with 48 Efficiency for WiMAX Applications, 2007 IEEE Compound Semiconductor Integrated Circuit Symposium Digest 2 H. Deguchi , A Band 537W Peak Power GaN HEMT Asymmetric Doherty Amplifier with 48 Drain Efficiency at 7dB BO, 2012 IEEE MTT-S Int. Microwave Symposium Digest 3 S. Mizuno , A 20 Watts GaN HEMT, 2010 Asia-Pacific Microwave Conference 4 H. Yoshikoshi , Radiation Hardness Tests for Space Qualified X-band AlGaN/GaN HEMTs 2015 Reliability of Compound Semiconductor Workshop 5 K. Kikuchi , An GHz 310 W GaN HEMT for Radar Applications, 2014 IEEE MTT-S Int. Microwave Symposium Digest 6 URL http ( ) ( ) ( ) ( ) ( )
