Transcription of 無線通信用GaN HEMTの開発 - sei.co.jp
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無線通信用GaN HEMTの開発 - sei.co.jp
2018 1 SEI 192 69 1. GaN Si GaAs SiC GaN HEMT 1 Gallium Nitride High Electron Mobility Transistor 2000 1 1 1 GHz 30 GHz GaAs Si GaN HEMT GaN HEMT GaN HEMT 2. GaN HEMT 2 1 1 GaN Si GaAs 2 vsat Si 10 GaAs Ec vsat Ec/2 Johnson GaN HEMT GaN HEMT 400W Doherty GaN HEMT GaN HEMT GaN HEMT GaN HEMT Gallium nitride (GaN) high-electron-mobility transistors (HEMTs) have been widely used for cellular base stations and other high-power and high-frequency applications owing to their superior material properties.
70 無線通信用GaN HEMTの開発 このJohnson性能指標で比較すると、GaNはSiと比較し て27倍、GaAsと比較しても約15倍と圧倒的な優位性を有
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