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無線通信用GaN HEMTの開発 - sei.co.jp
70 無線通信用GaN HEMTの開発 このJohnson性能指標で比較すると、GaNはSiと比較し て27倍、GaAsと比較しても約15倍と圧倒的な優位性を有
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HEMT, HEMT Uniformity with Various Buffer and Barrier Structures, Power Device, FUJITSU, HEMT Power Device, High reverse isolation S12, > -30dB at, 60 GHz Wireless, 60 GHz Wireless Communication Applications, Super Low Noise HEMT, A comprehensive methodology to qualify the, A comprehensive methodology to qualify the reliability, Texas Instruments, Biasing GaN on SiC HEMT Devices