Transcription of GaN系半導体デバイスの技術開発課題と ... - JST
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GaN系半導体デバイスの技術開発課題と ... - JST
GaN .. 29 3 . Technological Issues and Future Prospects of GaN and Related Semiconductor devices Strategy for Technology Development Proposal Paper for Policy Making and Governmental Action toward Low Carbon Societies .. LCS-FY2016-PP-08.. GaN. GaN .. 29. 3 . 29 3 .. GaN .. GaN .. Summary The recent progress of crystal growth technologies has achieved a remarkable improvement of the crystal qualities of GaN and its related semiconductors in the forms of both epitaxially-grown thin films and bulk crystals. The GaN devices are expected to be developed for various applications in near future because of the attractive physical properties of GaN including wide bandgap, optical properties and electrical properties. In this report, the current status of the researches and developments of laser diodes, high-frequency communication devices , and power devices are summarized to clarify the important technological challenges. JST . LCS .. GaN. GaN .. 29. 3 . 29 3.
The GaN devices are expected to be developed for various applications in near future because of the attractive physical properties of GaN including wide bandgap, optical properties and electrical properties. In this report, the current status of the researches and developments of laser diodes, high-frequency ... 5.1 横型HEMT構造と縦型 ...
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