GaN系半導体デバイスの技術開発課題と ... - JST

1 GaN .. 29 3 . Technological Issues and Future Prospects of GaN and Related Semiconductor devices Strategy for Technology Development Proposal Paper for Policy Making and Governmental Action toward Low Carbon Societies .. LCS-FY2016-PP-08.. GaN. GaN .. 29. 3 . 29 3 .. GaN .. GaN .. Summary The recent progress of crystal growth technologies has achieved a remarkable improvement of the crystal qualities of GaN and its related semiconductors in the forms of both epitaxially-grown thin films and bulk crystals. The GaN devices are expected to be developed for various applications in near future because of the attractive physical properties of GaN including wide bandgap, optical properties and electrical properties. In this report, the current status of the researches and developments of laser diodes, high-frequency communication devices , and power devices are summarized to clarify the important technological challenges. JST . LCS .. GaN. GaN .. 29. 3 . 29 3.

2 1. GaN .. 1. GaN .. 1. 2. GaN .. 3. GaN .. 3.. 3. GaN .. 4. 3. GaN .. 5. GaN LD .. 5. GaN LD .. 5. GaN LD .. 7. GaN LD .. 9. GaN LD .. 9. 4. GaN .. 10.. 10.. 10. GaN ..11.. 12. 5. GaN .. 13. HEMT .. 13. MOSFET .. 14. 6.. 16.. 16. JST . LCS .. GaN. GaN .. 29. 3 . 29 3 . 1. GaN . GaN . GaN .. SiC . GaN . (1) . GaN eV . GaN . InGaN InGaAlN GaN . InN eV AlN eV .. nm . LED LD .. (2) . GaN AlGaN/GaN . GaN c . AlGaN/GaN . 2 2 DEG . HEMT . HFET 2 DEG 1 10 cm 107cm/s . 13 -2. Si 2 . 500 GHz [1] InP . 100 GHz Si . GaAs . GaN . GaN .. Baliga BFOM . Si .. GaN MV/cm . [2],[3] GaN BFOM 900 . 1. JST 1. LCS .. GaN . GaN . 29 3 29 3 .. Baliga BHFFOM . BFOM Si GaN 100 GaN .. 1 . 1 . GaN 4H-SiC GaAs Si (eV) (MV/cm) 8 (cm/s) 107 107 107 107 107. (cm2/Vs) 2000 1000 1000 8500 1350. (W/cm K) 20 2 Baliga . 13000 900 500 16 1. (BFM)*. Baliga . 1100 100 65 11 1. (BHFM)**. ) * eEC Si ( : e . 3. EC ) ** beech 2 Si . (3) .. GaN .. MV/cm MV/cm . [2],[3] .. AlGaN/GaN . 2 DEG 1800 2000 cm2/Vs.

3 2. 1000 cm /Vs Si 4H-SiC .. 4H-SiC .. 2 DEG . 2. 2 JST . LCS .. GaN. GaN .. 29. 3 . 29 3 . / .. 2. GaN . GaN . GaN .. GaN . GaN .. HVPE 106cm-2 .. 103cm-2 .. GaAs SiC Si .. HEMT .. GaN .. SiC % . GaAs . 20% GaN .. Si . Si m . GaN 18% . GaN . 109 cm-2 .. 3. JST 3. LCS .. GaN . GaN . 29 3 29 3 . GaN .. 3 2 .. (1) HVPE . Ga HCl GaCl(g) NH3 . GaN 1000 1100 500 m . GaN GaN . GaAs 20% 18% . GaAs . GaN .. 104cm-2 .. (2) . Ga GaN . NH4C1 GaN .. 150 300 MPa 500 650 .. (3) . Na Ga N2 Na Ga 4:1 N2. 1000 100 .. HVPE .. 4. 4 JST . LCS .. GaN. GaN .. 29. 3 . 29 3 . 2 GaN .. HVPE .. 2 4 . 2 45 mm 6 . < 3 106cm-2. < 5 104 cm-2 <106 cm-2.. > 100 m/hr 10 m/hr . 1010 500 650 800 900 . Mpa 150 300 MPa 10 Mpa H2 NH3 Na-Ga .. GaAs . N2 .. 150 300 MPa 10 MPa NH3 N2. GaN Ga Na-Ga GaN GaN. Ga 3. GaN . GaN LD . LED . GaN . LD LD .. LED.. LD LD .. GaN LD [4],[5]. (1) LD . LD GaAs 180 mW 33% . GaN . 455 nm W 39 GaN .. 5. JST 5. LCS .. GaN . GaN . 29 3 29 3 . GaN .. (2) GaN LD .. InGaN In.

4 532 nm . 10 . 1 GaN c . InGaN GaN . In .. LED LD .. c 2 . InGaN . In . In .. GaN LD . 1064nm 532 nm 2 . 30 15 20 . GaN .. In . In .. 1 InGaN In . 2 GaN (a) (b) . 6. 6 JST . LCS .. GaN. GaN .. 29. 3 . 29 3 . (3) . GaN c In .. (0001) c 2 {1-100} {11-20} . {11-22} {1-101} {20-21} . (1-100) m nm [6] (20-21) 536 nm . In . c In . [7] c .. (4) LD . CO2 . LD . LD .. LD . GaN .. LD . GaN LD [5],[8],[9]. (1) TV . TV . TV LED.. 3D . 3 LED .. (a) LED (b) . B B G R. G.. R.. 3 LED . 7. JST 7. LCS .. GaN . GaN . 29 3 29 3 . TV 2010.. LD . LD . LD LED . LED LD . 3 LD .. LD .. LD .. (2) . TV LD .. LD .. (3) LD . TV RGB . 640nm . 10 W GaAs AlInP LD . DVD 660 nm 350mW .. LD GaN . 1064 nm . 532nm . 27 W 808 nm GaAs W . LD .. 440nm 10W LD . GaN In 442nm . 10W .. 8. 8 JST . LCS .. GaN. GaN .. 29. 3 . 29 3 . GaN LD [5],[8],[9]. (1) . LED LED . LD . LD LED .. LD .. LD RGB LD .. (2) .. HID LED 1000 .. GaN LD [4],[5]. (1) LD . LD . 400 500nm 670 685 nm .. 3 .. (2) .. m CO2 1 m . 900 nm LD.

5 600 nm LD 450 nm . 1 . 9. JST 9. LCS .. GaN . GaN . 29 3 29 3 . LD LD . 3 . 3 [5] .. TV .. 4. GaN .. LAN . 30-300 GHz . [11] .. [10]. Ka 26-40 GHz . V 40-75 GHz . W 75-111 GHz .. GaN [12] . 4 . GaN . W 5 . 10 Gbps . Ka W . V .. 10. 10 JST . LCS .. GaN. GaN .. 29. 3 . 29 3 . SiC. 10kW Si LDMOS. GaN . 100W.. 1W. GaAs InP. 10mW Si CMOS SiGe 1 GHz 10 GHz 100 GHz . 4 [12] . GaN . (1) GaN .. GaN AlGaN/GaN . 2 DEG HEMT . 2 DEG .. (fT) GaN HEMT 500 GHz fT . [1],[13] fT . (i) . (ii) . (iii) RC . 3 [10] (i) . (iii) GaN. 2 DEG (ii) GaN .. (2) . GaN HEMT MMIC . GaN MMIC . 75 GHz 3 MMIC [14] GaAs MMIC 16 . 6 . 11. JST 11. LCS .. GaN . GaN . 29 3 29 3 .. (1) GaN . 5 (a) .. FET. [15] .. HEMT . AlGaN 100 nm . AlGaN 20 30 nm . AlGaN/GaN 2 DEG .. (2) .. AlGaN . 5 (b) AlGaN . 2 DEG . AlGaN. AlGaN . GaN . HCl .. (a) GaN HEMT (b) .. 2 DEG AlGaN aL. GaN.. 2 DEG . 5 (a) HEMT (b) . (3) [10]. 2 DEG AlGaN/GaN .. AlGaN/GaN/AlGaN p AlGaN/n-GaN/p-GaN .. 12. 12 JST . LCS .. GaN. GaN.

6 29. 3 . 29 3 . 5. GaN . HEMT . HEMT AlGaN/GaN . GaN .. HEMT . GaN . 2 4 . (1) HEMT . HEMT . 2 DEG . 1 1013cm-2 .. V .. HEMT . 100 m HEMT 10 kV . [16] V . HEMT . MV/cm . [17] .. GaN .. 2 DEG HEMT . 2 DEG .. 3 5V . (2) .. GaN . GaN SiC .. MV/cm MV/cm [2],[3] . 4H-SiC MV/cm GaN . 13. JST 13. LCS .. GaN . GaN . 29 3 29 3 . MOSFET . [18],[19] 2016 12 . 4H-SiC kV MOSFET [18] . 4 GaN MOSFET / . HEMT MOSFET MOSFET.. i GaN. MOSFET i AlGaN. i AlGaN. i GaN. i GaN p GaN. n GaN. Si 2 DEG. GaN .. MOSFET . Si .. MOSFET .. GaN .. MOSFET . (1) MOS . PN . MOSFET MOSFET .. GaN AlGaN GaN . nm . Si SiC MOS . SiO2 GaN . ALD MOCVD Al2O3 SiO2 . GaN MOSFET .. III-V MOS . GaN . MOS .. 14. 14 JST . LCS .. GaN. GaN .. 29. 3 . 29 3 . (2) MOSFET .. MOSFET .. AlGaN/GaN 2 DEG .. Si MOSFET . AlGaN/GaN .. [20] . AlGaN . 2 DEG . 2 DEG .. AlGaN MOS GaN.. p AlGaN pn 2 DEG . GIT [16],[18] . pn .. 3 5V .. (3) HEMT . MOSFET . AlGaN/GaN HEMT. [21] . AlGaN .. (4) .. AlGaN/GaN HEMT V .. 15. JST 15.

7 LCS .. GaN . GaN . 29 3 29 3 . 6.. GaN . 3 . 3 .. (1) GaN . GaN .. GaN . GaN .. (2) GaN . GaN . LD . LD InGaN .. HEMT . GaN .. (3) GaN .. [1] K. Shinohara, D. C. Regan, Y. Tang, A. L. Corrion, D. F. Brown, J. C. Wong, J. F. Robinson, H. H. Fung, A. Schmitz, T. C. Oh, S. J. Kim, P. S. Chen, R. G. Nagele, A. D. Margomenos, and M. Micovic, Scaling of GaN HEMTs and Schottky Diodes for Submillimeter-Wave MMIC Applications , IEEE Transactions on Electron devices , vol. 60, no. 10, , 2013. [2] I. C. Kizilyalli, A. P. Edwards, H. Nie, D. Disney, and D. Bour, High Voltage Vertical GaN p-n Diodes With Avalanche Capability , IEEE Transactions on Electron devices , vol. 60, No. 10, , 2013. [3] A. M. Ozbek and B. J. Baliga, Planar Nearly Ideal Edge-Termination Technique for GaN devices , IEEE Electron Device Letters, Vol. 32, No. 3, , 2011. 16. 16 JST . LCS .. GaN. GaN .. 29. 3 . 29 3 . [4] 162 , . , , 232p, 2013. [5] , , , . , , 14p, 2016. [6] K. Okamoto, J. Kashiwagi, T.

8 Tanaka and M. Kubota, Nonpolar m-plane InGaN multiple quantum well laser diodes with a lasing wavelength of nm , Appl. Phys. Lett., Vol. 94, No. 7, 071107, 2009. [7] Y. Yoshizumi, M. Adachi, Y Enya, T. Kyono, S. Tokuyama, T. Sumitomo, K. Akita, T. Ikegami, M. Ueno, K. Katayama, and T. Nakamura, Continuous-Wave Operation of 520 nm Green InGaN-Based Laser Diodes on Semi-Polar {2021} GaN Substrates , Appl. Phys. Express, Vol. 2, No. 9, , 2009. [8] , . , 2012 3 . [9] , . , , 44p, 2015. [10] 162 , . , , 336p, 2013. [11] , 1. , #4000293 ( 2016 12. 1 ). [12] , , , Vol. 88, No. 9, , 2014. [13] D. S. Lee, X. Gao, S. Guo, D. Kopp, P. Fay, and T. Palacios, 300-GHz InAlN/GaN HEMTs With InGaN. Back Barrier , IEEE Electron Device Letters, Vol. 32, No. 11, , 2011. [14] , 21 , ( 2016 12. 1 ). [15] G. H. Jessen, R. C. Fitch, J. K. Gillespie, G. Via, A. Crespo, D. Langley, D. J. Denninghoff, M. Trejo, and E. R. Heller, Scaling of GaN HEMTs and Schottky diodes for submillimeter-wave MMIC.

9 Applications , IEEE Transactions on Electron devices , Vol. 54, No. 10, , 2007. [16] H. Ishida, D. Shibata, H. Matsuo, M. Yanagihara, Y. Uemoto, T. Ueda, T. Tanaka, and D. Ueda, GaN- based natural super junction diodes with multi-channel structures , Technical Digest of IEEE. International Electron Device Meeting, , 2008. [17] M. Kuzuhara and H. Tokuda, Low-Loss and High-Voltage III-Nitride Transistors for Power Switching Applications , IEEE Transactions on Electron devices , Vol. 62, No. 2, , 2015. [18] D. Shibata, R. Kajitani, M. Ogawa, K. Tanaka, S. Tamura, T. Hatsuda, M. Ishida, and T. Ueda, kV. m cm2 Normally-off Vertical GaN Transistor on GaN substrate with Regrown p-GaN/AlGaN/GaN. Semipolar Gate Structure , Technical Digest of IEEE International Electron Device Meeting, p. 248- 251, 2016. [19] T. Oka, T. Ina, Y. Ueno, and J. Nishii, m -cm2 vertical GaN-based trench metal oxide . semiconductor field-effect transistors on a free-standing GaN substrate for operation , Applied Physics Express, Vol.

10 8, No. 5, 054101, 2015. [20] T. Kachi, Recent progress of GaN power devices for automotive applications , Japanese Journal of Applied Physics, Vol. 53, , 2014. 17. JST 17. LCS .. GaN . GaN . 29 3 29 3 . [21] M. Meneghini, P. Vanmeerbeek, R. Silvestri, S. Dalcanale, A. Banerjee, D. Bisi, E. Zanoni, G. Meneghesso, and Peter Moens, Temperature-Dependent Dynamic RON in GaN-Based MIS-HEMTs: Role of Surface Traps and Buffer Leakage , IEEE Transactions on Electron devices , Vol. 62, No. 3, , 2015. 18. 18 JST . LCS .. GaN .. 29 3 . Technological Issues and Future Prospects of GaN and Related Semiconductor devices Strategy for Technology Development, Proposal Paper for Policy Making and Governmental Action toward Low Carbon Societies, Center for Low Carbon Society Strategy, Japan Science and Technology Agency, 2017. 3.. Koji KITA . Kunio SAEGUSA .. 102-8666 5-3 4 . TEL 03-6272-9270 FAX 03-6272-9273 E-mail . 2017 JST/LCS.