Transcription of GaN HEMTを用いた携帯電話基地局向け 広帯域・高出力・高 …
1 2019 7 SEI 195 23 1. GaN SiC gan hemt 1 gallium nitride High Electron Mobility Transistor 2000 2006 gan hemt 1 gan hemt Si LDMOS FET gan hemt gan hemt 1 1 1 1 2
2 RF gan hemt LDMOS FET 3-inch 4-inch gan hemt LDMOS FET gan hemt 2 gan hemt GaN gan hemt LDMOS gan hemt gan hemt gan hemt 180W 2 3 LTE B1 B3 8dB 50% gallium nitride high electron mobility transistors (GaN HEMTs) are characterized by high power, high efficiency, and wideband operation.
3 In recent years, they have gained market share for base station applications. GaN HEMTs are more advantageous for wideband applications than LDMOSs and therefore expected to contribute to the establishment of high-power multi-band base stations. This paper presents a packaged gan hemt device with internal matching circuits. A high-power wideband asymmetric Doherty amplifier using the devices are also described. The transistor has a pair of 180 W GaN dies. The internal matching circuit is designed with a high-dielectric substrate so that it can be mounted in a compact package while maintaining the wideband characteristics. The asymmetric Doherty amplifier is fabricated using three transistors to cover B1 and B3 LTE bands.
4 It achieves an output power of dB and drain efficiency of more than 50% at 8-dB power backoff in the GHz range. gan hemt gan hemt Wideband High-Power High-Efficiency Amplifiers with GaN HEMTs for Base Station Applications James Wong Andrei GrebennikovAkira Akiyama Naoki Watanabe Hiroaki Deguchi Kaname Ebihara24 gan hemt HEMT 2. gan hemt 1 RF 3 GaN SiC gan hemt - Cds Cds LDMOS RF LDMOS FET gan hemt LDMOS FET gan hemt SiC RF 3.
5 gan hemt 3 gan hemt 2 180W gan hemt GND RF FET - Cgs 180W gan hemt 1 1 2 1 1 2 [GHz]Single band PAMulti band [GHz]Single band ModeMulti band Mode 1 2 Er = 250H = mmT = mmTand = 3 gan hemt 1 RF eV MV/cm W/cm/K x107cm/s gan hemt 2019 7 SEI 195 25 gan hemt 1 360W 1dB 4 Vd 50V Idq 450mA 2 GHz 55dBm +j0 61 4.
6 6dB 10dB 6-10dB 4 1 5 6 AB CA C PA 4 5 AB 7 AB 6dB 6dB 1 2 1 High Efficiency at 1.
7 3+j0 High power ImpedanceP1dB = 55dBm at 1. 4 Pout50 Pin50 /4/4 Hig h im pedancewhen turned offPACA50 Pin50 /4/4 Hig h im pedancewhen turned offPACA50 5 6 26 gan hemt 4 2 /4 1 2 8 4 3 3 1
8 2 8 9 3-way 3-way 2 2 1 2 3 10 LTE B1 2 180Wx2 3 55V 60dBm 1kW 83 15dB 20 MHz LTE PAR 9dB 100W 10dB 55 PoutEfficiencyPsat6dB back back offCla ss ABSymmetric DohertyAsymmetric Doherty(1 :2) 7 Pout50 Pin50 /2/4/4 Hig h im pedancewhen turned offPACA50 25 Pout50 Pin50 /2/2/4 Hig h im pedancewhen turned off/4 Hig h im pedancewhen turned offPA1PA2CA50 50 50 In put3-wayin-phasediv id er 8 9 10 2019 7 SEI 195 275.
9 LTE B1 B3 180Wx2 3 11 /4 12 55V 2dB 78 8dB 50 6. gan hemt 832W 8dB 132W 50 gan hemt gan hemt 5G 6 GHz/28 GHz 1 HEMTHigh Electron Mobility Transistor 2 1 H.
10 Sano et al., A 40W gan hemt Doherty Power Amplifier with 48 Efficiency for WiMAX Applications," 2007 IEEE Compound Semiconductor Integrated Circuit Symposium Digest 2 :RF-POWER-GAN-PORT 3 2006 4 H. Deguchi, et al., A 33W gan hemt Doherty Power Amplifier with 55 Drain Efficiency for base stations, 2009 IEEE MTT-S Int. Microwave Symposium Digest 5 H. Deguchi et al., A Band 537W Peak Power gan hemt Asymmetric Doherty Amplifier with 48 Drain Efficiency at 7dB BO, 2012 IEEE MTT-S Int. Microwave Symposium DigestPout50 Output co mbin erPin50 Offset lin es3/4/4/2 Peak1 MainPeak2/4 Hig h im pedancewhen turned off/2/4/2 Input3- wayin-phasedividerHig h im pedancewhen turned off 11 12 28 gan hemt ( ) James Wong Sumitomo Electric Europe Grebennikov Sumitomo Electric Europe D.
