GaN HEMTを用いた携帯電話基地局向け 広帯域・高出力・高 …
（GaN HEMT※1： Gallium Nitride High Electron Mobility Transistor）の研究および開発を2000年から進め、2006 ... power wideband asymmetric Doherty amplifier using the devices are also described. The transistor has a pair of 180 W GaN dies. The internal matching circuit is designed with a high-dielectric substrate so that it can ...
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