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GaN系半導体デバイスの技術開発課題と ... - JST

GaN系半導体デバイスの技術開発課題と ... - JST

www.jst.go.jp

The GaN devices are expected to be developed for various applications in near future because of the attractive physical properties of GaN including wide bandgap, optical properties and electrical properties. In this report, the current status of the researches and developments of laser diodes, high-frequency ... 5.1 横型HEMT構造と縦型 ...

  Devices, Them, Gan devices

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