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HEMT - Fujitsu
GaN HEMT I ds V ds 0 0 ドレイン電圧 V ds （ V ） ドレイン電流 I ds （ A ） （b）GaN HEMTとSJ Si MOSFETのパルス応答特性 スイッチング損失 スイッチング損失 表-2 スイッチング特性比較 GaN HEMT Si MOSFET オン時間（ns） 7.0 41.5 オフ時間（ns） 7.5 30.5 オン損失（µJ） 5.6 45.4 ...
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