Transcription of Gate-drive Recommendations for Phase Control …
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Gate-drive Recommendations for Phase Control …
Application note Gate-drive Recommendations for Phase Control and Bi-directionally Controlled Thyristors IGMIGon100 %90 %10 %IGM AIGon IGTdiG/dt 2 A/ str 1 stp(IGM) sdiG/dttrtp (IGM)IG (t)ttp (IGon) 2 Doc. No. 5 SYA2034-02 June 07 Gate-drive Recommendations for Phase Control and Bi-directionally Controlled Thyristors Application Note Bj rn Backlund, Thomas Setz J rg Waldmeyer, Eric Carroll ABB Switzerland Ltd Semiconductors June 2007 Table of Contents: 1 2 Gate-drive Recommendations AND APPLICATION GATE DESIGN AND CHARACTERISTICS OF ABB Recommendations WITH REGARDS TO GATE-CURRENT, Gate-drive AND Recommendations FOR CROW-BAR AND OTHER HIGH DI/DT RC-SNUBBER AND PARASITIC CAPACITANCE BACK-PORCH CURRENTS AND PICKE
Application note Gate-drive Recommendations for Phase Control and Bi-directionally Controlled Thyristors I GM I Gon 100 % 90 % 10 % I GM ≈ 2..5 A I Gon
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