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General Description Product Summary
AO340730V P-Channel MOSFETG eneral DescriptionProduct SummaryVDS ID (at VGS= -10V) RDS(ON) (at VGS= -10V)< 52m RDS(ON) (at VGS = )< 87m SymbolVDSThe AO3407 uses advanced trench technology to provideexcellent RDS(ON) with low gate charge. This device issuitable for use as a load switch or in PWM Maximum Ratings TA=25 C unless otherwise noted-30 VDrain-Source Voltage-30 SOT23 Top View Bottom View DGSGSDGDSVGSIDMTJ, TSTGS ymbolt 10sSteady-StateSteady-StateR Junction-to-Lead C/W C/WMaximum Junction-to-Ambient A D6312580 Maximum Junction-to-Ambient CTA=70 CPulsed Drain Current CContinuous DrainCurrentV 20 Gate-Source VoltageParameterTypMax C/WR CJunction and Storage Temperature Range-55 to 150 CThermal CharacteristicsPower Dissipation BPDTA=25 CW Rev 5.
AO3407 30VP-Channel MOSFET General Description Product Summary VDS ID (at V GS = -10V) -4.1A R DS(ON) (at V GS = -10V) < 52mΩ R DS(ON) (at V GS = -4.5V) < 87mΩ Symbol VDS The AO3407 uses advanced trench technology to provide excellent R DS(ON) with low gate charge. This device is
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