General Description Product Summary

1 AO340730V P-Channel MOSFETG eneral DescriptionProduct SummaryVDS ID (at VGS= -10V) RDS(ON) (at VGS= -10V)< 52m RDS(ON) (at VGS = )< 87m SymbolVDSThe AO3407 uses advanced trench technology to provideexcellent RDS(ON) with low gate charge. This device issuitable for use as a load switch or in PWM Maximum Ratings TA=25 C unless otherwise noted-30 VDrain-Source Voltage-30 SOT23 Top View Bottom View DGSGSDGDSVGSIDMTJ, TSTGS ymbolt 10sSteady-StateSteady-StateR Junction-to-Lead C/W C/WMaximum Junction-to-Ambient A D6312580 Maximum Junction-to-Ambient CTA=70 CPulsed Drain Current CContinuous DrainCurrentV 20 Gate-Source VoltageParameterTypMax C/WR CJunction and Storage Temperature Range-55 to 150 CThermal CharacteristicsPower Dissipation BPDTA=25 CW Rev 5.

2 Nov 1 of 5 AO3407 SymbolMinTypMax UnitsBVDSS-30 VVDS=-30V, VGS=0V-1TJ=55 C-5 IGSS 100 nAVGS(th)Gate Threshold (ON)-25A3452TJ=125 C52735487m Qg(10V) ( ) (on) , VDS=-15V, f=1 MHzSWITCHING PARAMETERSE lectrical Characteristics (TJ=25 C unless otherwise noted)STATIC PARAMETERSP arameterConditionsDrain-Source Breakdown VoltageID=-250 A, VGS=0 VVGS=-10V, VDS=-5 VVGS=-10V, ID= (ON)Static Drain-Source On-ResistanceIDSS AVDS=VGS ID=-250 AVDS=0V, VGS= 20 VZero Gate Voltage Drain CurrentGate-Body leakage currentm On state drain currentIS=-1A,VGS=0 VVDS=-5V, ID= , ID=-3 AForward TransconductanceDiode Forward VoltageGate resistanceVGS=0V, VDS=0V, f=1 MHzReverse Transfer CapacitanceTotal Gate ChargeVGS=-10V, VDS=-15V, ID= Source ChargeGate Drain ChargeTotal Gate ChargeMaximum Body-Diode Continuous CurrentInput CapacitanceOutput CapacitanceTurn-On DelayTimeDYNAMIC PARAMETERSTurn-On Rise TimeV=-10V, V=-15V, (off) Product HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET.

3 APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISINGOUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE Product DESIGN,FUNCTIONS AND RELIABILITY WITHOUT , dI/dt=100A/ sBody Diode Reverse Recovery TimeTurn-Off Fall TimeBody Diode Reverse Recovery ChargeIF= , dI/dt=100A/ sTurn-On Rise TimeTurn-Off DelayTimeVGS=-10V, VDS=-15V,RL= , RGEN=3 A. The value of R JAis measured with the device mounted on 1in2FR-4 board with 2oz. Copper, in a still air environment with TA=25 C. The value in any given application depends on the user's specific board The power dissipation PDis based on TJ(MAX)=150 C, using 10s junction-to-ambient thermal Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150 C.

4 Ratings are based on low frequency and duty cycles to keep initialTJ=25 The R JAis the sum of the thermal impedence from junction to lead R JLand lead to The static characteristics in Figures 1 to 6 are obtained using <300 s pulses, duty cycle These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2FR-4 board with 2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150 C. The SOA curve provides a single pulse rating. Rev 5: Nov 2 of 5 AO3407 TYPICAL ELECTRICAL AND THERMAL (A)-VGS(Volts)Figure 2: Transfer Characteristics (Note E)10203040506070800246810 RDS(ON)(m )-ID(A)Figure 3: On-Resistance vs.

5 Drain Current and Gate Voltage (Note E) 100 125 150 175 Normalized On-ResistanceTemperature ( C)Figure 4: On-Resistance vs. Junction Temperature (Note E)VGS= C125 CVDS=-5 VVGS= (A)-VDS(Volts)Fig 1: On-Region Characteristics (Note E)VGS= + + + (A)-VSD(Volts)Figure 6: Body-Diode Characteristics (Note E)25 C125 C(Note E)20406080100120246810 RDS(ON)(m )-VGS(Volts)Figure 5: On-Resistance vs. Gate-Source Voltage (Note E)ID= C125 C Rev 5: Nov 3 of 5 AO3407 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS02468100246810-VGS(Volts) Qg(nC)Figure 7: Gate-Charge Characteristics0200400600800051015202530 Capacitance (pF)-VDS(Volts)Figure 8: Capacitance CharacteristicsCissCossCrssVDS=-15 VID= (W)Pulse Width (s)Figure 10: Single Pulse Power Rating Junction-to-Ambient (Note F)TA=25 (Amps)VDS(Volts)Figure 9: Maximum Forward Biased Safe 10 s10s1msDCRDS(ON) limitedTJ(Max)=150 CTA=25 C100 s10ms10msAmbient (Note F)Figure 9.

6 Maximum Forward Biased Safe Operating Area (Note F) JANormalized Transient Thermal ResistancePulse Width (s)Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)Single PulseD=Ton/TTJ,PK=TA+ JATonTPDIn descending orderD= , , , , , , single pulseR JA=125 C/W Rev 5: Nov 4 of 5 AO3407 VDCIgVdsDUTVDCVgsVgsQgQgsQgdChargeGate Charge Test Circuit & Waveform-+-+-10 VDUTVgsDiode Recovery Test Circuit & WaveformsVds -Vds +rrQ = - IdttrrVDCDUTVddVgsVdsVgsRLRgResistive Switching Test Circuit & Waveforms-+VgsVdstttttt90%10%rond(off)fo ffd(on)IgVgs-+VDCLIsdVds -dI/dtRMVddVddtrr-Isd-VdsF-I-I Rev 5: Nov 2011 5 of 5