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General Description Product Summary • Trench …
AONS62614 General DescriptionProduct SummaryVDS ID (at VGS=10V)100A RDS(ON) (at VGS=10V)< RDS(ON) (at VGS= )< Applications100% UIS Tested100% Rg TestedSymbolVDSVGSIDMIASA valanche energy L= Spike IVSPIKETJ, TSTGS ymbolt 10sSteady-StateSteady-StateRqJC60V N-Channel AlphaSGTTMTA=25 CTA=70 CTC=25 CTC=100 COrderable Part NumberPackage TypeFormMinimum Order Quantity60V Trench Power MOSFET - AlphaSGTTM technology Low RDS(ON) Logic Level Gate Drive Excellent Gate Charge x RDS(ON) Product (FOM) RoHS and Halogen-Free CompliantTC=25 CAvalanche Current CContinuous DrainCurrentThermal CharacteristicsParameterMaxTA=70 CUnitsJunction and Storage Temperature Range-55 to 150 TypPDSMWTA=25 Dissipation AMaximum Junction-to-Ambient A C/WRqJA154020 WIDVA42A320 IDSM30mJ26537100 VAAbsolute Maximum Ratings TA=25 C unless otherwise noted 20 VMaximumUnitsAONS62614 DFN 5x6 Tape & Reel3000 Maximum Junction-to-Case C/W C/WMaximum Junction-to-Ambient A High Frequency Switching and Synchronous RectificationPower Dissipation C 10 sPD6072119 Gate-Source VoltagePulsed Drain Current C100 ParameterDrain-Source VoltageContinuous DrainCurrent GG D S Top View SSSGDDDD1 2 3 4 8 7 6 5 PIN1 PIN1 DFN5x6 Top View Bottom View : October 1 of
AONS62614 General Description Product Summary VDS ID (at V GS =10V) 100A R DS(ON) (at V GS =10V) < 2.5mΩ R DS(ON) (at V GS =4.5V) < 3.4mΩ Applications 100% UIS Tested 100% Rg Tested 60V N-Channel AlphaSGT TM
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