Transcription of HETERO JUNCTION FIELD EFFECT TRANSISTOR …
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HETERO JUNCTION FIELD EFFECT TRANSISTOR …
Caution: Observe precautions when handling because these devices are sensitive to electrostatic discharge HETERO JUNCTION FIELD EFFECT TRANSISTOR ne3509m04 L TO S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FETD ocument No. PG10608EJ02V0DS (2nd edition) Date Published October 2008 NS The mark <R> shows major revised points. The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" FIELD . FEATURES Super low noise figure and high associated gainNF = dB TYP., Ga = dB TYP. @ f = 2 GHz, VDS = 2 V, ID = 10 mA Flat-lead 4-pin thin-type super minimold (M04) packageAPPLICATIONS Satellite radio (SDARS, DMB, etc.) antenna LNA GPS antenna LNA Low noise amplifier for microwave communication systemORDERING INFORMATION Part Number Order Number Package Quantity Marking Supplying Form ne3509m04 ne3509m04 -A Flat-lead 4-pin thin-type super minimold (M04) (Pb-Free) 50 pcs (Non reel) V80 8 mm wide embossed taping Pin 1 (Source), Pin 2 (Drain) face th
Caution: Observe precautions when handling because these devices are sensitive to electrostatic discharge HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3509M04 L TO S BAND LOW NOISE AMPLIFIER
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