Transcription of NE3513M04 Data Sheet - ce L
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NE3513M04 Data Sheet - ce L
A Business Partner of Renesas Electronics Corporation. data Sheet NE3513M04 R09DS0028EJ0100. N-Channel GaAs HJ-FET, X to Ku Band Low Noise and High-Gain Oct 18, 2011. 14 D. FEATURES. Low noise figure and high associated gain: 4. NF = dB TYP., Ga = 13 dB TYP. @VDS = 2 V, ID = 10 mA, f = 12 GHz NF = dB TYP., Ga = 12 dB TYP. @VDS = 2 V, ID = 6 mA, f = 12 GHz (Reference Value). 35 E. M. Flat-lead 4-pin thin-type super minimold (M04) package APPLICATIONS. NU. DBS LNB gain-stage, Mix-stage Low noise amplifier for microwave communication system ORDERING INFORMATION. CE. Part Number Order Number Package Quantity Marking Supplying Form NE3513M04 -T2 NE3513M04 -T2-A Flat-lead 4-pin 3 kpcs/reel V84 Embossed tape 8 mm wide thin-type super Pin 1 (Source), Pin 2 (Drain).
R09DS0028EJ0100 Rev.1.00 Page 1 of 8 Oct 18, 2011 NE3513M04 Data Sheet N-Channel GaAs HJ-FET, X to Ku Band Low Noise and High-Gain FEATURES • Low noise figure and high associated gain:
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