NE3513M04 Data Sheet - ce L

1 A Business Partner of Renesas Electronics Corporation. data Sheet NE3513M04 R09DS0028EJ0100. N-Channel GaAs HJ-FET, X to Ku Band Low Noise and High-Gain Oct 18, 2011. 14 D. FEATURES. Low noise figure and high associated gain: 4. NF = dB TYP., Ga = 13 dB TYP. @VDS = 2 V, ID = 10 mA, f = 12 GHz NF = dB TYP., Ga = 12 dB TYP. @VDS = 2 V, ID = 6 mA, f = 12 GHz (Reference Value). 35 E. M. Flat-lead 4-pin thin-type super minimold (M04) package APPLICATIONS. NU. DBS LNB gain-stage, Mix-stage Low noise amplifier for microwave communication system ORDERING INFORMATION. CE. Part Number Order Number Package Quantity Marking Supplying Form NE3513M04 -T2 NE3513M04 -T2-A Flat-lead 4-pin 3 kpcs/reel V84 Embossed tape 8 mm wide thin-type super Pin 1 (Source), Pin 2 (Drain).

2 TI. minimold (M04) face the perforation side of the NE3513M04 -T2B NE3513M04 -T2B-A (Pb-Free) 15 kpcs/reel t: tape en Remark To order evaluation samples, please contact your nearby sales office. Part number for sample order: NE3513M04 -A. p N. em ABSOLUTE MAXIMUM RATINGS (TA = +25 C, unless otherwise specified). Parameter Symbol Ratings Unit O. Drain to Source Voltage VDS V. lac Gate to Source Voltage VGS V. Drain Current ID IDSS mA. Gate Current IG 80 A. SC. Note Total Power Dissipation Ptot 125 mW. Channel Temperature Tch +125 C. Re Storage Temperature Tstg 65 to +125 C. Note: Mounted on cm2 mm (t) glass epoxy PWB. -In D I. p D. ro CAUTION. Observe precautions when handling because these devices are sensitive to electrostatic discharge.

3 R09DS0028EJ0100 Page 1 of 8. Oct 18, 2011. A Business Partner of Renesas Electronics Corporation. NE3513M04 . RECOMMENDED OPERATING RANGE (TA = +25 C, unless otherwise specified). Parameter Symbol MIN. TYP. MAX. Unit Drain to Source Voltage VDS +1 +2 +3 V. Drain Current ID 3 10 15 mA. Input Power Pin 0 dBm 14 D. ELECTRICAL CHARACTERISTICS (TA = +25 C, unless otherwise specified). 4. Parameter Symbol Test Conditions MIN. TYP. MAX. Unit 35 E. M. Gate to Source Leak Current IGSO VGS = V 10 A. Saturated Drain Current IDSS VDS = 2 V, VGS = 0 V 15 30 60 mA. Gate to Source Cut-off Voltage VGS (off) VDS = 2 V, ID = 100 A V. NU. Transconductance gm VDS = 2 V, ID = 10 mA 50 65 mS. Noise Figure NF VDS = 2 V, ID = 10 mA, f = 12 GHz dB.

4 Associated Gain Ga 13 dB. STANDARD CHARACTERISTICS FOR REFERENCE. (TA = +25 C, unless otherwise specified). CE. Parameter Symbol Test Conditions Reference Value Unit Noise Figure NF VDS = 2 V, ID = 6 mA, f = 12 GHz dB. TI. Associated Gain Ga 12 dB. t: en p N. em O. lac SC. Re -In D I. p D. ro R09DS0028EJ0100 Page 2 of 8. Oct 18, 2011. A Business Partner of Renesas Electronics Corporation. NE3513M04 . TYPICAL CHARACTERISTICS (TA = +25 C, unless otherwise specified). TOTAL POWER DISSIPATION DRAIN CURRENT vs. vs. AMBIENT TEMPERATURE GATE TO SOURCE VOLTAGE. 250 60. VDS = 2 V. 14 D. Total Power Dissipation Ptot (mW). 50. 200. Drain Current ID (mA). 40. 4. 150. 30. 35 E. M. 125. 100. 20. 50. 10. NU. 125. 0. 0 50 100 150 200 250 0.

5 Ambient Temperature TA ( C) Gate to Source Voltage VGS (V). MINIMUM NOISE FIGURE, DRAIN CURRENT vs. CE. ASSOCIATED GAIN vs. DRAIN CURRENT DRAIN TO SOURCE VOLTAGE. 16 60. f = 12 GHz Minimum Noise Figure NFmin (dB). VDS = 2 V 14. TI. 50. Ga Associated Gain Ga (dB). 12. Drain Current ID (mA). 10. t: 40. VGS = 0 V. en 8 30. V. p N. 6. 20 V. 4. em NFmin V. 10. 2 V. 0 0. O. 0 5 10 15 20 25 30 lac Drain Current ID (mA) Drain to Source Voltage VDS (V). MINIMUM NOISE FIGURE, MINIMUM NOISE FIGURE, ASSOCIATED GAIN vs. FREQUENCY ASSOCIATED GAIN vs. FREQUENCY. SC. 24 24. VDS = 2 V VDS = 2 V. 22 22. Minimum Noise Figure NFmin (dB). Minimum Noise Figure NFmin (dB). ID = 6 mA ID = 10 mA. Re 20 20. Associated Gain Ga (dB). Associated Gain Ga (dB).

6 18 18. 16 16. Ga 14 Ga 14. -In 12 12. 10 10. D I. 8 8. NFmin 6 NFmin 6. p D. 4 4. 2 2. ro 0 0. 0 2 4 6 8 10 12 14 16 18 20 0 2 4 6 8 10 12 14 16 18 20. Frequency f (GHz) Frequency f (GHz). Remark The graphs indicate nominal characteristics. R09DS0028EJ0100 Page 3 of 8. Oct 18, 2011. A Business Partner of Renesas Electronics Corporation. NE3513M04 . S-PARAMETERS. S-parameters/Noise-parameters are provided on our web site in a form (S2P) that enables direct import to a microwave circuit simulator without keyboard input. Click here to download S-parameters. [RF and Microwave] [Device Parameters]. 14 D. URL 4. 35 E. M. NU. CE. TI. t: en p N. em O. lac SC. Re -In D I. p D. ro R09DS0028EJ0100 Page 4 of 8. Oct 18, 2011.

7 A Business Partner of Renesas Electronics Corporation. NE3513M04 . MOUNTING PAD DIMENSIONS. FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04) (UNIT: mm). -Reference 1- 14 D. 4. 35 E. M. 1. 0. 0. NU. 1. 9. 4. 2. CE. 0. 1. 1. 0. TI. 3. t: TH. en p N. em -Reference 2- O. lac 2. 3. SC. Re 1. 4. -In D I. Remark The mounting pad layout in this document is for reference only. p D. ro R09DS0028EJ0100 Page 5 of 8. Oct 18, 2011. A Business Partner of Renesas Electronics Corporation. NE3513M04 . PACKAGE DIMENSIONS. FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04) (UNIT: mm). 14 D. 4. 35 E. M. (Bottom View). NU. + ( ). + 3. 2. 2. 3. V84. CE. TI. 1. 4. 4. 1. t: + + en p N. + em O. PIN CONNECTIONS. lac 1. Source 2. Drain 3. Source SC.

8 4. Gate Re -In D I. p D. ro R09DS0028EJ0100 Page 6 of 8. Oct 18, 2011. A Business Partner of Renesas Electronics Corporation. NE3513M04 . RECOMMENDED SOLDERING CONDITIONS. This product should be soldered and mounted under the following recommended conditions. For soldering methods and conditions other than those recommended below, contact your nearby sales office. Soldering Method Soldering Conditions Condition Symbol Infrared Reflow Peak temperature (package surface temperature) : 260 C or below IR260. 14 D. Time at peak temperature : 10 seconds or less Time at temperature of 220 C or higher : 60 seconds or less Preheating time at 120 to 180 C : 120 30 seconds 4. Maximum number of reflow processes : 3 times Maximum chlorine content of rosin flux (% mass) : (Wt.)

9 Or below 35 E. M. Partial Heating Peak temperature (terminal temperature) : 350 C or below HS350. Soldering time (per side of device) : 3 seconds or less Maximum chlorine content of rosin flux (% mass) : (Wt.) or below NU. CAUTION. Do not use different soldering methods together (except for partial heating). CE. TI. t: en p N. em O. lac SC. Re -In D I. p D. ro R09DS0028EJ0100 Page 7 of 8. Oct 18, 2011. A Business Partner of Renesas Electronics Corporation. NE3513M04 . This product uses gallium arsenide (GaAs). Caution GaAs Products GaAs vapor and powder are hazardous to human health if inhaled or ingested, so please observe the following points. Follow related laws and ordinances when disposing of the product.

10 If there are no applicable laws and/or ordinances, dispose of the product as recommended below. 14 D. 1. Commission a disposal company able to (with a license to) collect, transport and dispose of materials that contain arsenic and other such industrial waste materials. 4. 2. Exclude the product from general industrial waste and household garbage, and ensure that the product is controlled (as industrial waste subject to special control) up until final disposal. 35 E. M. Do not burn, destroy, cut, crush, or chemically dissolve the product. Do not lick the product or in any way allow it to enter the mouth. NU. CE. TI. t: en p N. em O. lac SC. Re -In D I. p D. ro R09DS0028EJ0100 Page 8 of 8. Oct 18, 2011. Revision History NE3513M04 data Sheet Description Rev.