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1 NEC XXXXXXXXXX1 PRODUCTS by APPLICATION Front End Components Up to 6 GHz Applications 2 LNAs for 2 to 8 GHz Applications 3 LNBs for 12 to 20 GHz Applications 3 PRODUCT SPECIFICATIONS RF Switch ICs SPDTs (Single Pole Double Throw) 4 SP3Ts (Single Pole Triple Throw) 5 DPDTs (Double Pole Double Throw) 5 GaAs FETs Low Noise GaAs FETs, 1 to 20 GHz 5 Silicon MOSFET Devices RF Power LD-MOSFETs 6 MOSFET for Microphone Impedance Conversion 6 Silicon Bipolar Transistors Single Transistors 7 Twin Transistors 8 Silicon RFICs 3V Silicon MMIC Amplifiers 8 5V Silicon MMIC Amplifiers 9 Frequency Upconverters 9 Frequency Downconverters 9 Package Dimensions 10 About CELCEL (California Eastern Laboratories) is an engineering, sales and marketing company focused on RF Semiconductors, Optical Semiconductors and Wireless Connectivity Solutions.

2 CEL serves designers, OEMs and contract manufacturers in various RF, Wireless and Optical markets. With over 55 years experience in high frequency design, customer support and fulfillment, CEL is ide ally positioned to provide its customers with a stable supply of products to meet their specific needs. CEL maintains extensive inventories and provides engineering and applications assistance at its technical centers in Santa Clara, CA., Buffalo Grove, IL and Lafayette, CO. The company supports customers through sales offices, sales representatives and distributors in numerous Headquarters 4590 Patrick Henry DriveSanta Clara, CA 95054 Tel: (408) 919-2500 ^^^. rMWi-Fi Bluetooth ZigBee Automated Meter Reading Mesh & Home Area Networks ISM Band ApplicationsCEL SwitchesChipsetTransceiverLNAsINOUT5 - 6 GHz5 - 6 GHzPowerAmplifiersHigh/Medium Power RFIC Switches(SPDT, SP3T or DPDT)Low PowerRFIC SwitchesSPDT, SP3T or DPDTRFIC SwitchesUPG2253T6S Front End ICTransceiverFront End Components Up to 6 GHz ApplicationsRFIC Switches (additional P/Ns available, see page 4) , High Power and High Isolation for WLAN44CG2176X3 SPDT, High Power & High Isolation Absorptive Dual Band Switch44CG2179M2 SPDT, Low cost , Insertion Loss: for Dual Band WLAN, Insertion Loss: @ 6 GHz, small package 44CG2214M6 SPDT, Insertion Loss.

3 @ , Isolation = 25 @ , Dual Band High Power for WLAN444CG2430X1SP3T, Insertion Loss: @ 6 GHz, Isolation = 25dB @ 6 GHz4444 UPG2162T5 NDPDT, Insertion Loss: @ 6 GHz, 27dB Isolation @ 6 GHz44 UPG2163T5 NSPDT, , Insertion Loss: @ , @ 6 GHz444 UPG2164T5 NDPDT, Diversity/Transfer Switch (two selectable RF paths on)44 UPG2176T5 NSPDT, 6 GHz, Insertion Loss: @ , internal terminations44 UPG2406 TKSPDT, or control voltage, dB Insertion Loss @ / TKSPDT, 3V, Insertion Loss, SOT-363 and SMD Packages444 UPG2409TB / T6 XSPDT, High Power wide bandwidth, SOT-363 / TSON packages444T6X onlyUPG2415TK / T6 XSPDT, for Dual Band WLAN, low insertion loss for Access Point applicationsT6X only444 UPG2422 TKSPDT,for Dual Band WLAN, control voltage range4444 Power Amplifier Transistors (additional P / Ns available, see page 7 & 9)

4 +33dBm, 2W, LDMOS FET44NE5550979A + , 9W, LD MOSFET44NE664M04+26dBm, Silicon Discrete444NE677M04+15dBm, V Silicon Discrete444NE678M04+18dBm, V Silicon Discrete444 Low Noise Amplifier Silicon Discrete, NF = , Ga = , OIP3 = +22dBm @ 2 GHz444NE3508M04 GaAs FET, NF = , Ga = , OIP3 = +31dBm @ 2 GHz44NE3509M04 GaAs FET, NF = , Ga = , OIP3 = +22dBm @ 2 GHz44 LNBs for 12 to 20 GHz & Transistor LNAsLow LossPre-FilterRFICLNAHigh RejectionPost-FilterRFICS witchesGPSR eceiverICFIRSTSTAGESECONDSTAGEF ilterNE662M04NE3509M04NE3510M04NE662M04N E3508M04NE662M04NE3508M04 THIRDSTAGET uner/Receiver20 GHz LNB12 GHz LNBCE3503M4CE3512K2CE3503M4CE3521M4CE352 1M4CE3520K31st2nd3rd1st2ndPartNumberNF TYP (dB) Ga TYP (dB)ConditionsFreq. (GHz)VDS (V)ID(mA)KU for 2 to 8 GHz ApplicationsPart NumberDescriptionNF(dB)Gain(dB)P1dB(dBm) PackageNE662M04 Silicon Bipolar @ @ + @ @ + @ @ + @ @ + (See data tables for additional specifications) (See data tables for additional specifications)4^^^.

5 RMSPDTs (Single Pole Double Throw)Part NumberTYPICAL ELECTRICAL CHARACTERISTICS (TA = 25 C) (GHz, max)Control Voltages (V)Insertion Loss(dB)Isolation(dB)Input Power@ dBcompression point(dBm)Input Power@ dBcompression point(dBm) , , @ @ 6 GHz40 @ @ 6 GHz +33 @ +32 @ 6 GHzX3 Highest Isolation, great and 6 GHz , , @ @ @ @ @ 22 @ X3 Absorptive, Highest Power , , @ @ +30 @ 3 GHz M2 Low Cost General Purpose SPDTCG2185X2 , , @ @ 6 GHz28 @ 26 @ 6 GHz+29 @ +29 @ 6 GHz+32 @ +32 @ 6 GHzX2 SPDT specified to 6 GHz with a very small & thin , , @ @ +30 @ 3 GHz M6 General Purpose , , @ @ 6 GHz32 @ @ 6GH+31 @ +31 @ 6 GHz M6 High Power SPDT for WLAN Access Point, small size , , @ @ +17 @ 1 GHz+21 @ 1 GHzTKSingle Control ( )

6 , small size package, , , @ @ +34 @ 1 GHz TBHigh power handling, low insertion loss, high , , @ @ +27 @ TKMedium power, small size , , @ @ + @ TBHigh power handling, low harmonics,high power , , @ @ 6 GHz @ 8 GHz38@ 30 @ 6 GHz 23 @ 8 GHz +31 @ +29 @ 6 GHzT5 NHigh isolation, great and 6 GHz , , @ @ 6 GHz27 @ @ 6 GHz +37 @ +37 @ , high power and high linearity to , , @ @ +23 @ +27 @ insertion loss, high isolation, medium power, , , @ @ +23 @ +27 @ size package, low inseriton loss, high isolation, medium power, , , @ +29 @ + @ Purpose SPDTUPG2406TK , , @ @ +29 @ + @ size package, cost effective medium power, , , @ @ +29 @ TBLow cost medium power for , , @ @ 2 GHz+29 @ TKSmall size package, cost effective medium , , @ GHz+ @ +35 @ power SPDT, for Access Points to , , @6 GHz30 @ GHz 27 @6 GHz+34 @ +34 @ 6 GHz+36 @ +36 @ 6 GHzT6 XHigh power, for Access Points to 6 GHz, QFN package , , @ 6 GHz28 @ GHz 26 @6 GHz+31 @ +31 @ 6 GHz+34 @ +34 @ 6 GHzTKHigh power handling for Access Points to 6 GHz, small size package , , @ 6 GHz28 @ GHz 26 @6 GHz+31 @ +31 @ 6 GHz+35 @ +35 @ 6 GHzT6 XHigh power handling for Access Points to 6 GHz, QFN package , , @ @ 6 GHz28 @ @ 6 GHz+28 @ +28 @ 6 GHz+31 @ +31 @ 6 GHzTKLow cost 6 GHz SPDT, medium power, small size package, low inseriton loss.

7 High isolation, : 1. See Package Dimensions on page 10RF Switch ICs5^^^. rMGaAs FETs DPDTs (Double Pole Double Throw) PartNumberTYPICAL ELECTRICAL CHARACTERISTICS (TA = 25 C)Package Code1 DescriptionFrequency(GHz, max)Control Voltages (V)Insertion Loss(dB)Isolation(dB)Input dBcompression point(dBm)Input dBcompression point(dBm) , , @ 1 GHz22 @ 1 GHz+15 @ 1 GHz+20 @ 1 GHzT6 NOnly one control pin, low frequency operation, CMOS, , , @ @ 6 GHz30 @ 27 @ 6 GHz +31 @6 GHzT5 NBest isolation of all DPDTs, up to 6 GHz operation , , @6 GHz25 @ 17 @ 6 GHz +31 @6 GHzT5 NLowest cost, lowest insertion loss DPDT. 6 GHz : 1. See Package Dimensions on page 10 Notes: 1. See Package Dimensions on page 10SP3Ts (Single Pole Triple Throw)Part Number1 TYPICAL ELECTRICAL CHARACTERISTICS (TA = 25 C)Package Code1 DescriptionFrequency(GHz, max)Control Voltages (V)Insertion Loss(dB)Isolation(dB)Input dBcompression point(dBm)Input dBcompression point(dBm) , , @ @ 6 GHz28 @ @ 6 GHz+28 @ +28 @ 6 GHz+31 @ +31 @ 6 GHzX1SP3T specified to 6 GHz with high isolationRF Switch ICs continuedLow Noise GaAs FETs, 1 to 20 GHz Typical Specifications @ TA = 25 CPartNumberGate Length ( m)Gate Width ( m)Test Frequency (GHz)NF/GA BiasNFOPT (dB)GA (dB)IDSS (mA)Power BiasP1dB (dBm)Package Code1 Package DescriptionVDS (V)IDS (mA)VDS (V)IDS (mA)

8 CE3503M4 M4 Plastic SMDCE3512K2 K2 Micro-X PlasticCE3520K3 K3 Micro-X PlasticCE3521M4 M4 Plastic S01 Plastic M04 Plastic + + + S02 Micro-X S02 Micro-X M04 Plastic S02 Micro-X + S02 Micro-X 3 . 5 40 S03 Micro-X PlasticNE3520S03 S03 Micro-X PlasticNE3521M04 M04 Plastic S01 Plastic SMDN otes: 1. See Package Dimensions on page 106^^^. rMPartNumberPOUT (dBm) TYPL inear Gain (dB) TYPTest ConditionsPackage Code1 Package DescriptionFreq (GHz)PIN (dBm)VDS (V)IDSQ (mA)NE5531079A+ + SMDNE55410GR+ +1628120 GRPlastic SMDNE5550234+33+ +15+ SMDNE5550279A+ + SMDNE5550779A+ + +25+ SMDNE5550979A+ + +25+ SMDRF Power LD-MOSFETs Typical Specifications @ TC = 25 CPartNumberSupply Voltage (V)CircuitCurrent ( A)Input Capacitance (pF)Voltage Gain (dB)Output NoiseVoltage (dBV)Total HarmonicDistortion (%)HBM ESD (KV)Package >8M53 MOSFET for Microphone Impedance ConversionNotes: 1.

9 See Package Dimensions on page 10 Notes: 1. See Package Dimensions on page 10 Silicon MOSFET Devices7^^^. rMPart NumberJEITA1 Part NumberNPN /PNPfT TYP (GHz)Test Freq (GHz)Test VCE (V)NF TYP (dB)MAG TYP (dB)hFE (TYP)VCEO MAX (V)Ic MAX (mA)Package2 Type NE202930 NA NPN 11 1 5 15 140 6 100 30 / SOT-323 NE46134 2SC4536 NPN 1 10 2 9 120 15 250 34 / SOT-89 NE461M02 2SC5337 NPN 1 10 2 10 120 15 250 M02 / SOT-89 NE46234 2SC4703 NPN 6 1 5 150 12 150 34 / SOT-89 NE462M02 2SC5338 NPN 6 1 5 150 12 150 M02 / SOT-89 NE66219 2SC5606 NPN 21 2 2 14 80 35 19 / SOT-523 NE662M04 2SC5508 NPN 25 2 2 19 70 35 M04 / SOT-343F NE663M04 2SC5509 NPN 15 2 2 14 70 100 M04 / SOT-343F NE664M04 2SC5754 NPN 20 2 3 12 60 5 500 M04 / SOT-343F NE67718 2SC5750 NPN 15 2 3 15 120 6 50 18 / SOT-343 NE67739 2SC5454 NPN 2 3 14 110 6 50 39 / SOT-143

10 NE677M04 2SC5751 NPN 15 2 3 16 120 6 50 M04 / SOT-343F NE67818 2SC5752 NPN 12 2 3 13 120 6 100 18 / SOT-343 NE67839 2SC5455 NPN 12 2 3 14 110 6 100 39 / SOT-143 NE678M04 2SC5753 NPN 12 2 3 120 6 100 M04 / SOT-343F NE68018 2SC5013 NPN 10 2 6 13 100 10 35 18 / SOT-343 NE68019 2SC5008 NPN 8 2 3 120 10 35 19 / SOT-523 NE68030 2SC4228 NPN 8 2 3 100 10 35 30 / SOT-323 NE68033 2SC3585 NPN 10 2 6 10 100 10 35 33 / SOT-23 NE68039 2SC4095 NPN 10 2 6 12 100 10 35 39 / SOT-143 NE68118 2SC5012 NPN 9 1 8 18 100 10 65 18 / SOT-343 NE68119 2SC5007 NPN 7 1 3 120 10 65 19 / SOT-523 NE68130 2SC4227 NPN 7 1 3 13 140 10 65 30 / SOT-323 NE68133 2SC3583 NPN 9 1 8 15 100 10 65 33 / SOT-23 NE68139 2SC4094 NPN 9 1 8 17 150 10 65 39 / SOT-143 NE68518 2SC5015 NPN 12 2 3 13 110 6 30 18 / SOT-343 NE68519 2SC5010 NPN 12 2 3 11 110 6 30 19 / SOT-523 NE68539 2SC4957 NPN 12 2 3 110 6 30 39 / SOT-143 NE85618 2SC5011 NPN 1 10 16 120 12 100 18 / SOT-343 NE85619 2SC5006 NPN 1 3 120 12 100 19 / SOT-523 NE85630 2SC4226 NPN 1 3 110 12 100 30 / SOT-323 NE85633 2SC3356 NPN 7 1 10 13 120 12 100 33 / SOT-23 NE85634 2SC3357 NPN 1 10 10 120 12 100 34 / SOT-89 NE85639 2SC4093 NPN 7 1 10