Transcription of IGBT/MOSFET Gate Drive Optocoupler
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IGBT/MOSFET Gate Drive Optocoupler
VISHAY SEMICONDUCTORSO ptocouplers and Solid-State RelaysApplication Note 91 IGBT/MOSFET gate Drive OptocouplerAPPLICATION NOTE Rev. , 24-Oct-111 Document Number: 81227 For technical questions, contact: DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENTARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT TO IGBTThe Insulated gate bipolar transistor ( igbt ) is a crossbetween a MOSFET (metal oxide semiconductor field effecttransistor) and a BJT ( bipolar junction transistor) since itcombines the positive aspects of mosfets and igbt has the fast switching capability of the MOSFETand is capable of handling the high current values typical ofa BJT. In addition, IGBTs have a lower on-state voltage dropand are capable of blocking higher igbt , as a first approximation, can be modeled as aPNP transistor driven by a power MOSFET, as shown infigure 1.
The Insulated Gate Bipolar transistor (IGBT) is a cross between a MOSFET (metal oxide semiconductor field effect transistor) and a BJT (bipolar junction transistor) since it combines the positive aspects of MOSFETs and BJTs. The IGBT has …
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