Transcription of Power MOSFET Basics
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Power MOSFET Basics
Source gate Power MOSFET Basics N+. P-body Table of Contents N- Epi 1. Basic Device Structure 2. Breakdown Voltage 3. On-State Characteristics N+ Substrate 4. Capacitance 5. gate Charge Drain 6. gate Resistance 7. Turn-on and Turn-off Figure 1b: Planar MOSFET Structure 8. Body Diode Forward Voltage 9. Body Diode Reverse Recovery 2. Breakdown Voltage 10. Avalanche capability and ratings 11. dV/dt ratings In most Power MOSFETs the N+ source and P-body junction 12. Thermal Resistance Characterization are shorted through source metallization to avoid accidental 13.
turn-on of the parasitic bipolar transistor. When no bias is applied to the Gate, the Power MOSFET is capable of supporting a high Drain voltage through the reverse-biased P-body and N- Epi junction. In high voltage devices, most of the ... Gate charge parameter can be used to estimate switching times
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