Transcription of IGBT/MOSFET Gate Drive Optocoupler - Vishay
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Vishay SEMICONDUCTORSO ptocouplers and Solid-State RelaysApplication Note 91 IGBT/MOSFET gate Drive OptocouplerAPPLICATION NOTE Rev. , 24-Oct-111 Document Number: 81227 For technical questions, contact: DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENTARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT TO IGBTThe Insulated gate Bipolar transistor ( igbt ) is a crossbetween a MOSFET (metal oxide semiconductor field effecttransistor) and a BJT (bipolar junction transistor) since itcombines the positive aspects of mosfets and igbt has the fast switching capability of the MOSFETand is capable of handling the high current values typical ofa BJT.
VISHAY SEMICONDUCTORS Optocouplers and Solid-State Relays Application Note 91 IGBT/MOSFET Gate Drive Optocoupler APPLICATION NOTE Rev. 1.3, 24-Oct-11 1 Document Number: 81227
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