Transcription of IRF1404 - Infineon Technologies
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IRF1404 - Infineon Technologies
PD-91896F. IRF1404 . HEXFET Power MOSFET. l Advanced Process Technology l Ultra Low On-Resistance D. l Dynamic dv/dt Rating VDSS = 40V. l 175 C Operating Temperature l Fast Switching RDS(on) = . l Fully Avalanche Rated G. l Automotive Qualified (Q101). ID = 202A . S. Description Seventh Generation HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications including automotive.
IRF1404 HEXFET® Power MOSFET Seventh Generation HEXFET ® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per
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