Transcription of IRF1407 - Infineon Technologies
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IRF1407 - Infineon Technologies
@ TC = 25 CContinuous Drain Current, VGS @ 10V130 ID @ TC = 100 CContinuous Drain Current, VGS @ 10V92 AIDMP ulsed Drain Current 520PD @TC = 25 CPower Dissipation330 WLinear Derating CVGSGate-to-Source Voltage 20 VEASS ingle Pulse Avalanche Energy 390mJIARA valanche Current See , 12b, 15, 16 AEARR epetitive Avalanche Energy mJdv/dtPeak Diode Recovery dv/dt Junction and-55 to + 175 TSTGS torage Temperature RangeSoldering Temperature, for 10 seconds300 ( from case ) CMounting Torque, 6-32 or M3 screw10 lbf in ( m)HEXFET Power MOSFETS pecifically designed for Automotive applications, this Stripe Planardesign of HEXFET Power MOSFETs utilizes the lastest processingtechniques to achieve extremely low on-resistanc
IRF1407 www.irf.com 3 Fig 4. Normalized On-Resistance vs. Temperature Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics
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