Transcription of J IR2151 - Semiconductor & System Solutions
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J IR2151 - Semiconductor & System Solutions
Features Floating channel designed for bootstrap operationFully operational to +600 VTolerant to negative transient voltagedV/dt immune Undervoltage lockout Programmable oscillator frequencyf= + (R75 ) CTT Matched propagation delay for both channels Low side output in phase with RTDescriptionThe IR2151 is a high voltage, high speed, self-os-cillating power MOSFET and IGBT driver with bothhigh and low side referenced output channels. Pro-prietary HVIC and latch immune CMOS technologiesenable ruggedized monolithic construction.
Features •Floating channel designed for bootstrap operation Fully operational to +600V Tolerant to negative transient voltage dV/dt immune •Undervoltage lockout •Programmable oscillator frequency f = ×+ × 1 1.4 (R 75 ) CTTΩ •Matched propagation delay for both channels •Low side output in phase with RT Description The IR2151 is a high voltage, …
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