J IR2151 - Semiconductor & System Solutions

1 Features Floating channel designed for bootstrap operationFully operational to +600 VTolerant to negative transient voltagedV/dt immune Undervoltage lockout Programmable oscillator frequencyf= + (R75 ) CTT Matched propagation delay for both channels Low side output in phase with RTDescriptionThe IR2151 is a high voltage, high speed, self-os-cillating power MOSFET and IGBT driver with bothhigh and low side referenced output channels. Pro-prietary HVIC and latch immune CMOS technologiesenable ruggedized monolithic construction.

2 The frontend features a programmable oscillator which is simi-lar to the 555 timer. The output drivers feature a highpulse current buffer stage and an internal deadtimedesigned for minimum driver cross-conduction. Propa-gation delays for the two channels are matched to sim-plify use in 50% duty cycle applications. The floatingchannel can be used to drive an N-channel powerMOSFET or IGBT in the high side configuration thatoperates off a high voltage rail up to 600 Data Sheet No. PD60034-JSELF-OSCILLATING HALF-BRIDGE DRIVERP roduct SummaryVOFFSET600V Cycle50%IO+/-100 mA / 210 mAVOUT10 - 20 VDeadtime (typ.)

3 SPackagesTypical Connection18 Lead PDIP8 Lead SOICIR2151 (NOTE: For new designs, werecommend IR s new products IR2153 and IR21531)up to 600 VVCCVBVSHOLOCOMRTCTTOLOAD(Refer to Lead Assignment diagram for correct pin configuration)IR21512 Symbol side floating supply side floating supply offset voltageVB - 25VB + side floating output voltageVS - + side output + + + current (note 1) 25 IRTRT output current-55dVs/dtAllowable offset supply voltage transient 50V/nsPDPackage power dissipation @ TA +25 C(8 lead DIP) (8 lead SOIC) JAThermal resistance, junction to ambient(8 lead DIP)

4 125(8 lead SOIC) 200 TJJunction temperature 150 TSStorage temperature-55150 CTLLead temperature (soldering, 10 seconds) 300 Absolute Maximum RatingsAbsolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage param-eters are absolute voltages referenced to COM. The thermal resistance and power dissipation ratings are measuredunder board mounted and still air C/WWmAstructure between the chip VCC and COM which has a nominal breakdown voltage of Therefore, the ICsupply voltage is normally derived by forcing current into the supply lead (typically by means of a high valueresistor connected between the chip VCC and the rectified line voltage and a local decoupling capacitor fromVCC to COM) and allowing the internal zener clamp circuit to determine the nominal supply voltage.

5 There-fore, this circuit should not be driven by a DC, low impedance power source of greater than 1:Because of the IR2151 s application specificity toward off-line supply systems, this IC contains a zener side sloating supply absolute voltageVS + 10VS + 20 VSHigh side floating supply offset voltage 600 VHOHigh side floating output voltageVSVBVLOLow side output voltage0 VCCICCS upply current (note 1) 5mATAA mbient temperature-40125 CRecommended Operating ConditionsThe input/output logic timing diagram is shown in figure 1. For proper operation the device should be used within therecommended conditions.

6 The VS offset rating is tested with all supplies biased at 15V Test ConditionstrTurn-on rise time 80120tfTurn-off fall time sDRT duty cycle485052%Dynamic Electrical CharacteristicsVBIAS (VCC, VBS) = 12V, CL = 1000 pF and TA = 25 C unless otherwise Test ConditionsfOSCO scillator = k 94100106RT = k VCLAMPVCC zener shunt clamp = 5 mAVCT+2/3 VCC VCC undervoltage lockout <VCC<VCCUV+VRT+RT high level output voltage, VCC - RT 0100 IRT = -100 A 200300 IRT = -1 mAVRT-RT Low Level Output Voltage 2050 IRT = 100 A 200300 IRT = 1 mAVRTUVRT Undervoltage Lockout, VCC - RT <VCC<VCCUV+VOHHigh Level Output Voltage, VBIAS - VO 100IO = 0 AVOLLow Level Output Voltage.

7 VO 100IO = 0 AILKO ffset Supply Leakage Current 50VB = VS = 600 VIQBSQ uiescent VBS Supply Current 1050 IQCCQ uiescent VCC Supply Current 400950 ICTCT Input Current +VCC Supply Undervoltage Positive Supply Undervoltage Negative Supply Undervoltage Lockout Hysteresis200500 mVIO+Output High Short Circuit Pulsed Current100125 VO = 0 VIO-Output Low Short Circuit Pulsed Current210250 VO = 15 VStatic Electrical CharacteristicsVBIAS (VCC, VBS) = 12V, CL = 1000 pF, CT = 1 nF and TA = 25 C unless otherwise specified. The VIN, VTH and IINparameters are referenced to COM.

8 The VO and IO parameters are referenced to COM and are applicable to therespective output leads: HO or AkHzVIR21514 Functional Block DiagramLead Assignments8 Lead DIP8 Lead +-+-RQSQRRRDEADTIMES ymbolDescriptionRTOscillator timing resistor input,in phase with LO for normal IC operationCTOscillator timing capacitor input, the oscillator frequency according to the following equation:f= + (R75 ) CTT where 75 is the effective impedance of the RT output stageVBHigh side floating supplyH OHigh side gate drive outputVSHigh side floating supply returnVCCLow side and logic fixed supplyLOLow side gate drive outputCOMLow side returnLead DefinitionsIR2151501-3003 018 Lead PDIP01-0021 088 Lead SOICIR21516 Figure 1.

9 Input/Output Timing DiagramFigure 2. Switching Time Waveform DefinitionsFigure 3. Deadtime Waveform DefinitionsHOVCCVCLAMPVCCUV+RTCTLORT (LO)trtfLOHO50%50%90%90%10%10%RT (HO)RTHO50%50%90%10%LO90%10%DTWORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245 Tel: (310) 252-7105 Data and specifications subject to change without notice. 3/30/2001