Transcription of LDO Performance Near Dropout - TI.com
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LDO Performance Near Dropout - TI.com
ApplicationReportSBVA029 PMOSlow- Dropout (LDO) ,theeffectonseveralkeyelectricalcharacte risticsisexamed:lineandloadregulation,po wer-supplyrejectionratio(PSRR),controllo opstabilityandtransientresponse, (OutputImpedanceIgnored).. March2013 LDOP erformanceNearDropoutSubmitDocumentation FeedbackCopyright 2013,TexasInstrumentsIncorporatedGACGgmC INVINCOZOZO_RegRAROR1R2 RESRRLoadVREFERENCEE rrorAmplifierPMOSPass FETII (dc)DOO VV(dc)DOUTOUT LDO showsthesimplifiedblockdiagramfora controllooptoprovidea dcregulatedvoltage,VOUT, attheload(RLoad) theproductofthreefactors:thevoltagedivid ergain[ = R2/ (R1+ R2)];thegainoftheErrorAmplifier(GA); andthevoltagegainofthecommon-sourceFETam plifier(GF= gm [rO|| (R1+ R2) ||ZO]),wheregmis a functionofthedesignedloopbandwidth,loopg ain,theaccuracyofthereferencevoltage,and mostsignificantly,theregionofoperationof thepassFET:thatis,thesaturationregionort helinearregionapproachingdropout(VDO).
60 50 40 30 20 10 0 ower/Hz)] 1 10 100 1 k 10 k 100 k 1 M Frequency (Hz) 0.5 V 0.3 V 0.2 V (1) 0.2 V 1 V V at Full Load DO TPS79501 …
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