Transcription of Lecture 8 - MIT
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Lecture 8 - MIT
Spring 2007 Lecture 81 Lecture 8 MOSFET(I)MOSFET I-V : cross-section, layout, characteristicsReading Assignment:Howe and Sodini, Chapter 4, Sections :Quiz#1, March 14, 7:30-9:30PM, Walker Memorial; covers Lectures #1-9; open book; must have Spring 2007 Lecture 821. MOSFET: layout, cross-section, symbols Inversion layer under gate(depending on gate voltage) Heavily doped regions reach underneath gate inversion layer to electrically connect sourceand drain 4-terminal device: bodyvoltage importantKey elements: deposited oxidefieldoxiden+ drain diffusiondraininterconnect p+[ p-type ]bulkinterconnectLdiffgate contact(a) Adraincontactsbulkcontactn+ polysilicon gate active area (thinoxide area)polysilicon gatecontactmetalinterconnectn+ source diffusionedge ofactive area sourceinterconnect(b)Ln+ polysilicon gate gate oxidegateinterconnectsource Spring 2007 Lecture 83 Circuit symbolsTwo complementary devices: n-channel device (n-MOSFET) on p-substrate uses electron inversion layer p-channel device (p-MOSFET) on n-Si substrate uses hole inversion layern+n+pBulk orBodyDrainSourceGate(a) n-channel MOSFET D G IDpBp+p+nBulk orBodyDrainGate(b) p-channel MOSFETS ource+_VSGDS G++_VGSIDnIDnBVSD > 0 VDS > 0 +_VBS+_VSBDGBSSSBDG Spring 2007 Lecture 842.
GS I Dn B V SD > 0 V DS > 0 + _ V BS + _ V SB G S S S B D G ... for VGS – V(y) ≥VT. . Note that we assumed that VT is independent of y. See discussion on body effect in Section 4.4 of text. 6.012 Spring 2007 Lecture 8 10 I-V Characteristics (Contd..) Solve by separating variables:
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