Transcription of MJD31 - Complementary Power Transistors
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MJD31 - Complementary Power Transistors
DATA Semiconductor Components Industries, LLC, 2016 June, 2022 Rev. 181 Publication Order Number: MJD31 /DComplementary PowerTransistorsDPAK For Surface Mount ApplicationsMJD31 (NPN), MJD32 (PNP)Designed for general purpose amplifier and low speed Lead Formed for Surface Mount Applications in Plastic Sleeves Straight Lead Version in Plastic Sleeves ( 1 Suffix) Lead Formed Version in 16 mm Tape and Reel ( T4 Suffix) Electrically Similar to Popular TIP31 and TIP32 Series Epoxy Meets UL 94, V 0 @ in NJV Prefix for Automotive and Other Applications RequiringUnique Site and Control Change Requirements; AEC Q101 Qualified and PPAP Capable These Devices are Pb Free and are RoHS CompliantMAXIMUM RATINGSR atingSymbolMaxUnitCollector Emitter VoltageMJD31, MJD32 MJD31C, MJD32 CVCEO40100 VdcCollector Base VoltageMJD31, MJD32 MJD31C, MJD32 CVCB40100 VdcEmitter Base Current Current Power Dissipation @ TC = 25 C Derate above 25 CTotal Power Dissipation@ TA = 25 C Derate above 25 COperating and Storage Junction TemperatureRangeTJ, Tstg 65 to+ 150 CESD human body ModelHBM3 BVESD Machine ModelMMM3 VStresses exceeding those listed in the Maximum Ratings table may damagethe device.
ESD − Human Body Model HBM 3B V ESD − Machine Model MM C V Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Characteristic Symbol Max Unit
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