MJD31 - Complementary Power Transistors

1 DATA Semiconductor Components Industries, LLC, 2016 June, 2022 Rev. 181 Publication Order Number: MJD31 /DComplementary PowerTransistorsDPAK For Surface Mount ApplicationsMJD31 (NPN), MJD32 (PNP)Designed for general purpose amplifier and low speed Lead Formed for Surface Mount Applications in Plastic Sleeves Straight Lead Version in Plastic Sleeves ( 1 Suffix) Lead Formed Version in 16 mm Tape and Reel ( T4 Suffix) Electrically Similar to Popular TIP31 and TIP32 Series Epoxy Meets UL 94, V 0 @ in NJV Prefix for Automotive and Other Applications RequiringUnique Site and Control Change Requirements; AEC Q101 Qualified and PPAP Capable These Devices are Pb Free and are RoHS CompliantMAXIMUM RATINGSR atingSymbolMaxUnitCollector Emitter VoltageMJD31, MJD32 MJD31C, MJD32 CVCEO40100 VdcCollector Base VoltageMJD31, MJD32 MJD31C, MJD32 CVCB40100 VdcEmitter Base Current Current Power Dissipation @ TC = 25 C Derate above 25 CTotal Power Dissipation@ TA = 25 C Derate above 25 COperating and Storage Junction TemperatureRangeTJ, Tstg 65 to+ 150 CESD human body ModelHBM3 BVESD Machine ModelMMM3 VStresses exceeding those listed in the Maximum Ratings table may damagethe device.

2 If any of these limits are exceeded, device functionality should notbe assumed, damage may occur and reliability may be CHARACTERISTICSC haracteristicSymbolMaxUnitThermal Resistance, Junction to C/WThermal Resistance, Junction to Ambient*RqJA80 C/WLead Temperature for Soldering PurposesTL260 C*These ratings are applicable when surface mounted on the minimum pad TRANSISTORS3 AMPERES40 AND 100 VOLTS15 WATTSSee detailed ordering and shipping information in the packagedimensions section on page 8 of this data INFORMATIONIPAKCASE 369 DSTYLE 1 DPAKCASE 369 CSTYLE 1 MARKING DIAGRAMSA= Site CodeY= YearWW= Work Weekxx= 1, 1C, 2, or 2CG= Pb Free PackageAYWWJ3xxGYWWJ3xxGDPAKIPAK41234123 1 BASE3 EMITTERCOLLECTOR2,41 BASE3 EMITTERCOLLECTOR2,4 COMPLEMENTARYMJD31 (NPN), MJD32 (PNP) CHARACTERISTICS (TC = 25_C unless otherwise noted)CharacteristicSymbolMinMaxUnitOFF CHARACTERISTICSC ollector Emitter Sustaining Voltage (Note 1)(IC = 30 mAdc, IB = 0) MJD31 , MJD32 MJD31C, MJD32 CVCEO(sus)40100 VdcCollector Cutoff Current(VCE = 40 Vdc, IB = 0) MJD31 , MJD32(VCE = 60 Vdc, IB = 0)MJD31C, MJD32 CICEO 5050mAdcCollector Cutoff Current(VCE = Rated VCEO, VEB = 0)ICES 20mAdcEmitter Cutoff Current(VBE = 5 Vdc, IC = 0)IEBO 1mAdcON CHARACTERISTICS (Note 1)DC Current Gain(IC = 1 Adc, VCE = 4 Vdc) (IC = 3 Adc, VCE = 4 Vdc)hFE2510 50 Collector Emitter Saturation Voltage (IC = 3 Adc, IB = 375 mAdc)VCE(sat) Emitter On Voltage (IC = 3 Adc, VCE = 4 Vdc)VBE(on) CHARACTERISTICSC urrent Gain Bandwidth Product (Note 2)(IC = 500 mAdc, VCE = 10 Vdc, ftest = 1 MHz)fT3 MHzSmall Signal Current Gain(IC = Adc, VCE = 10 Vdc, f = 1 kHz)

3 Hfe20 Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Productperformance may not be indicated by the Electrical Characteristics if operated under different Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%.2. fT = hfe (NPN), MJD32 (PNP) 1. Power DeratingT, TEMPERATURE ( C)050751001251502015105PD, Power DISSIPATION (WATTS)Figure 2. Switching Time Test , COLLECTOR CURRENT (AMPS) = IB2IC/IB = 10ts = ts - 1/8 tfTJ = 25 Ct, TIME ( s) 3. Turn On Time2IC, COLLECTOR CURRENT (AMPS) = 10TJ = 25 Ct, TIME ( s) +11 V25 ms0- 9 VRB- 4 VD1 SCOPEVCC+ 30 VRCtr, tf 10 nsDUTY CYCLE = 1%51RB and RC VARIED TO OBTAIN DESIRED CURRENT LEVELS D1 MUST BE FAST RECOVERY TYPE, : 1N5825 USED ABOVE IB 100 mA MSD6100 USED BELOW IB 100 mAREVERSE ALL POLARITIES FOR @ VCC = 30 Vtr @ VCC = 10 Vtd @ VBE(off) = 2 Vtf @ VCC = 30 Vtf @ VCC = 10 4.

4 Turn Off TimeTA (SURFACE MOUNT)TCTYPICAL CHARACTERISTICSF igure 5. Thermal , PULSE TIME (sec)RqJA ( C/W) Cycle = (NPN), MJD32 (PNP) CHARACTERISTICS MJD31 , MJD31C (NPN) , COLLECTOR CURRENT (A)Figure 6. DC Current Gain at VCE = 4 VhFE, DC CURRENT GAINVCE = 4 V25 C150 C 55 , COLLECTOR CURRENT (A)Figure 7. DC Current Gain at VCE = 2 VhFE, DC CURRENT GAINVCE = 2 V25 C150 C 55 , COLLECTOR CURRENT (A)Figure 8. Collector Emitter Saturation VoltageVCE(sat), COLL EMITT SATURATIONVOLTAGE (V)IC/IB = 1025 C150 C 55 CVBE(sat), BASE EMITT SATURATION VOLTAGE (V)IC, COLLECTOR CURRENT (A)Figure 9. Base Emitter Saturation = 5 VVBE(on), BASE EMITTER ON VOLTAGE (V)IC, COLLECTOR CURRENT (A)Figure 10. Base-Emitter On Voltage 55 C25 C150 = 10 55 C25 C150 , BASE CURRENT (mA)Figure 11. Collector Saturation RegionVCE, COLLECTOR EMITTER VOLTAGE (V)10 mA100 mA500 mA1 AIC = 3 ATA =25 CMJD31 (NPN), MJD32 (PNP) CHARACTERISTICS MJD31 , MJD31C (NPN) , REVERSE VOLTAGE (V)Figure 12.

5 CapacitanceC, CAPACITANCE (pF)CibCobTA = 25 = 5 VTA = 25 CIC, COLLECTOR CURRENT (A)Figure 13. Current Gain Bandwidth ProductfT, CURRENT GAIN BANDWIDTHPRODUCT (MHz) , COLLECTOR EMITTER VOLTAGE (V)Figure 14. Safe Operating AreaIC, COLLECTOR CURRENT (A) ms1 s10 ms100 ms500 msSingle Pulse Test @ TA = 25 CMJD31 (NPN), MJD32 (PNP) CHARACTERISTICS MJD32, MJD32C (PNP) , COLLECTOR CURRENT (A)Figure 15. DC Current Gain at VCE = 4 VhFE, DC CURRENT GAINVCE = 4 V25 C150 C 55 , COLLECTOR CURRENT (A)Figure 16. DC Current Gain at VCE = 2 VhFE, DC CURRENT = 2 V25 C150 C 55 C25 C150 C 55 CIC, COLLECTOR CURRENT (A)Figure 17. Collector Emitter SaturationVoltageVCE(sat), COLL EMITT SATURATIONVOLTAGE (V)IC/IB = C150 C 55 CIC, COLLECTOR CURRENT (A)Figure 18. Base Emitter Saturation VoltageVBE(sat), BASE EMITTERSATURATION VOLTAGE (V)IC/IB = = 5 V25 C150 C 55 CIC, COLLECTOR CURRENT (A)Figure 19.

6 Base Emitter On VoltageVBE(on), BASE EMITTER ONVOLTAGE (V) , BASE CURRENT (mA)Figure 20. Collector Saturation RegionVCE, COLLECTOR EMITTER VOLTAGE (V)10 mA100 mA500 mA1 AIC = 3 ATA =25 CMJD31 (NPN), MJD32 (PNP) , REVERSE VOLTAGE (V)Figure 21. CapacitanceC, CAPACITANCE (pF)CibCobTA = 25 , COLLECTOR CURRENT (A)Figure 22. Current Gain Bandwidth ProductfT, CURRENT GAIN BANDWIDTHPRODUCT (MHz)VCE = 5 VTA = 25 CFigure 23. Safe Operating , COLLECTOR EMITTER VOLTAGE (V)IC, COLLECTOR CURRENT (A) Pulse Test @ TA = 25 C1 ms1 s10 ms100 ms500 msMJD31 (NPN), MJD32 (PNP) INFORMATIOND evicePackage TypePackageShipping MJD31 CGDPAK(Pb Free)369C75 Units / RailNJVMJD31CG*DPAK(Pb Free)369C75 Units / RailMJD31C1 GIPAK(Pb Free)369D75 Units / RailMJD31 CRLGDPAK(Pb Free)369C1,800 / Tape & ReelNJVMJD31 CRLG*DPAK(Pb Free)369C1,800 / Tape & ReelMJD31CT4 GDPAK(Pb Free)369C2,500 / Tape & ReelNJVMJD31CT4G*DPAK(Pb Free)369C2,500 / Tape & ReelMJD31T4 GDPAK(Pb Free)369C2,500 / Tape & ReelNJVMJD31T4G*DPAK(Pb Free)369C2,500 / Tape & ReelMJD32 CGDPAK(Pb Free)369C75 Units / RailNJVMJD32CG*DPAK(Pb Free)369C75 Units / RailMJD32 CRLGDPAK(Pb Free)369C1,800 / Tape & ReelMJD32CT4 GDPAK(Pb Free)369C2,500 / Tape & ReelNJVMJD32CT4G*DPAK(Pb Free)369C2,500 / Tape & ReelMJD32 RLGDPAK(Pb Free)

7 369C1,800 / Tape & ReelMJD32T4 GDPAK(Pb Free)369C2,500 / Tape & ReelNJVMJD32T4G*DPAK(Pb Free)369C2,500 / Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel PackagingSpecifications Brochure, BRD8011/D.*NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC Q101 Qualified and 1:1 STYLE 1:PIN 1. BASE2. COLLECTOR3. EMITTER4. COLLECTORSTYLE 2:PIN 1. GATE2. DRAIN3. SOURCE4. DRAINSTYLE 3:PIN 1. ANODE2. CATHODE3. ANODE4. CATHODESTYLE 4:PIN 1. CATHODE2. ANODE3. GATE4. ANODESTYLE 5:PIN 1. GATE2. ANODE3. CATHODE4. ANODE1234 VSAK T SEATINGPLANERBFGD3 ( ) 6:PIN 1. MT12. MT23. GATE4. MT2 NOTES:1. DIMENSIONING AND TOLERANCING PERANSI , CONTROLLING DIMENSION: STYLE 7:PIN 1.

8 GATE2. COLLECTOR3. EMITTER4. COLLECTOR xxxxxxxxx = Device CodeA= Assembly LocationlL= Wafer LotY= YearWW= Work WeekYWWxxxxxxxxxxxxxALYWWxDiscreteIntegr atedCircuitsIPAKCASE 369D 01 ISSUE CDATE 15 DEC 2010 MARKINGDIAGRAMSMECHANICAL CASE OUTLINEPACKAGE DIMENSIONSON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regardingthe suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specificallydisclaims any and all liability, including without limitation special, consequential or incidental damages.

9 ON Semiconductor does not convey any license under its patent rights nor therights of NUMBER:DESCRIPTION:Electronic versions are uncontrolled except when accessed directly from the Document versions are uncontrolled except when stamped CONTROLLED COPY in 1 OF 1 IPAK (DPAK INSERTION MOUNT) Semiconductor Components Industries, LLC, (SINGLE GAUGE)CASE 369 CISSUE FDATE 21 JUL 2015 SCALE 1:1 STYLE 1:PIN 1. BASE2. COLLECTOR3. EMITTER4. COLLECTORSTYLE 2:PIN 1. GATE2. DRAIN3. SOURCE4. DRAINSTYLE 3:PIN 1. ANODE2. CATHODE3. ANODE4. CATHODESTYLE 4:PIN 1. CATHODE2. ANODE3. GATE4. ANODESTYLE 5:PIN 1. GATE2. ANODE3. CATHODE4. ANODESTYLE 6:PIN 1. MT12. MT23. GATE4. MT2 STYLE 7:PIN 1. GATE2. COLLECTOR3. EMITTER4. COLLECTOR1234 STYLE 8:PIN 1. N/C2. CATHODE3. ANODE4. CATHODESTYLE 9:PIN 1. ANODE2. CATHODE3. RESISTOR ADJUST4.

10 CATHODESTYLE 10:PIN 1. CATHODE2. ANODE3. CATHODE4. ( ) NOTES:1. DIMENSIONING AND TOLERANCING PER , CONTROLLING DIMENSION: THERMAL PAD CONTOUR OPTIONAL WITHIN DI-MENSIONS b3, L3 and DIMENSIONS D AND E DO NOT INCLUDE MOLDFLASH, PROTRUSIONS, OR BURRS. MOLDFLASH, PROTRUSIONS, OR GATE BURRS SHALLNOT EXCEED INCHES PER DIMENSIONS D AND E ARE DETERMINED AT THEOUTERMOST EXTREMES OF THE PLASTIC DATUMS A AND B ARE DETERMINED AT DATUMPLANE OPTIONAL MOLD 34 XXXXXX= Device CodeA= Assembly LocationL= Wafer LotY= YearWW= Work WeekG= Pb Free mminches SCALE 3:1 GENERICMARKING DIAGRAM**For additional information on our Pb Free strategy and solderingdetails, please download the ON Semiconductor Soldering andMounting Techniques Reference Manual, FOOTPRINT* BSCA1 HDETAIL ASEATINGPLANEABCL1 LHL2 GAUGEPLANEDETAIL AROTATED 90 CW5eBOTTOM VIEWZBOTTOM VIEWSIDE VIEWTOP VIEWALTERNATECONSTRUCTIONSNOTE 7Z*This information is generic.